Engineered large area fabrication of ordered InGaAs-GaAs nanotube arrays

Abstract

Strain induced self-rolling semiconductor micro and nanotubes and related structures represent a new class of building blocks of nanotechnology. They are formed when strained planar bilayers are released from the substrate by selectively removing the sacrificial layer. Compared to other nanotechnology building blocks, one of the main advantages is the precise positioning capability due to top down fabrication approach. In this article, we demonstrate the fabrication of perfectly aligned arrays of InGaAs/GaAs nanotubes and the dispersion of freestanding semiconductor nanotubes into solution and onto foreign substrates. In addition, we systematically investigate the crystal orientation dependence of the rolling direction by using a wheel configuration. Other aspects of formation process are also discussed.

Strain induced semiconductor nanotubes: from formation process to device applications

“…We have successfully demonstrated the fabrication of large areas of ordered arrays of In 0.3 Ga 0.7 As/GaAs SNTs, as shown in figure 8, using lithographically patterned rectangular mesa structures [47,61]. The tubes are 50 µm in length and ∼590 nm in diameter, with an aspect ratio of ∼85.…”