Engineered Thin Film Lithium Niobate Substrate for High Gain-Bandwidth Electro-optic Modulators

Stenger, Vincent; Toney, J.; Pollick, Andrea; Busch, J. R.; Scholl, Jon; Pontius, Peter; Sriram, Sharath

doi:10.1364/cleo_si.2013.cw3o.3

Cited by 7 publications

(5 citation statements)

References 4 publications

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“…Since then, various loading materials have been exploited, and rib-loaded modulators have become a major approach [25,116,203,220,221]. Meanwhile, other approaches such as proton-exchange in thinfilm have also been explored [73,222]. The second breakthrough happened around 2016 when dry-etched LNOI modulators reached propagation loss below 1 dB/cm [20].…”

Section: State Of the Artmentioning

confidence: 99%

Integrated photonics on thin-film lithium niobate

et al. 2021

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Lithium niobate (LN), an outstanding and versatile material, has influenced our daily life for decades: from enabling high-speed optical communications that form the backbone of the Internet to realizing radio-frequency filtering used in our cell phones. This half-century-old material is currently embracing a revolution in thin-film LN integrated photonics. The success of manufacturing wafer-scale, high-quality, thin films of LN on insulator (LNOI), accompanied with breakthroughs in nanofabrication techniques, have made high-performance integrated nanophotonic components possible. With rapid development in the past few years, some of these thin-film LN devices, such as optical modulators and nonlinear wavelength converters, have already outperformed their legacy counterparts realized in bulk LN crystals. Furthermore, the nanophotonic integration enabled ultra-low-loss resonators in LN, which unlocked many novel applications such as optical frequency combs and quantum transducers. In this Review, we cover-from basic principles to the state of the art-the diverse aspects of integrated thinfilm LN photonics, including the materials, basic passive components, and various active devices based on electro-optics, all-optical nonlinearities, and acousto-optics. We also identify challenges that this platform is currently facing and point out future opportunities. The field of integrated LNOI photonics is advancing rapidly and poised to make critical impacts on a broad range of applications in communication, signal processing, and quantum information.

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Section: State Of the Artmentioning

confidence: 99%

Integrated photonics on thin-film lithium niobate

et al. 2021

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“…One of the optical devices which play a central role in the optical communication is the optical modulator that converts an electrical signal into an optical signal. A wide range of electo-optic modulators (EOMs) including thin-film dielectrics [1,2], semiconductors [3,4], electro-optic polymer in slot waveguides [5], and electro-optic polymer in plasmonic waveguide [6] have been developed to further push its bandwidth as well as the energy efficiency. For a conventional traveling-wave EOM, the half-wave voltage (V π ), which is defined as the necessary voltage applied to shift the optical phase by a half of the wavelength, is known as one of the indices characterizing the performance of the optical modulator.…”

Section: Introductionmentioning

confidence: 99%

Superconducting Acousto-optic Phase Modulator

Okada,

Yamazaki,

Fuwa

et al. 2021

Preprint

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We report the development of a superconducting acousto-optic phase modulator fabricated on a lithium niobate substrate. A titanium-diffused optical waveguide is placed in a surface acoustic wave resonator, where the electrodes for mirrors and an interdigitated transducer are made of a superconducting niobium titanium nitride thin film. The device performance is evaluated as a substitute for the current electro-optic modulators, with the same fiber coupling scheme and comparable device size. Operating the device at a cryogenic temperature (T = 8 K), we observe the length-half-wave-voltage (length-Vπ) product of 1.78 V•cm. Numerical simulation is conducted to reproduce and extrapolate the performance of the device. An optical cavity with mirror coating on the input/output facets of the optical waveguide is tested for further enhancement of the modulation efficiency. A simple extension of the current device is estimated to achieve an efficient modulation with Vπ = 0.27 V.

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“…Notable devices that take advantage of the high index contrast provided by a thin LiNbO 3 substrate are tunable ring resonators [6], Mach-Zehnder interferometers [7], switches [8], and standalone phase modulators [7,[9][10][11]. Developed in parallel to these are various hybrid devices, that rely on either Si [12][13][14][15][16][17] or Si 3 N 4 [16,18,19] for loading and guiding of an optical mode.…”

Section: Introductionmentioning

confidence: 99%

“…Up to this point however, the other major advantage of thin-film LiNbO 3 , the significantly lower permittivity of the material system, has yet to be convincingly exploited [7,8,11,16]. To this end we present the first LiNbO 3 -based EO modulator that is engineered to perform continuously from DC to THz frequencies.…”

Section: Introductionmentioning

confidence: 99%

Thin film lithium niobate electro-optic modulator with terahertz operating bandwidth

et al. 2018

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We present a thin film crystal ion sliced (CIS) LiNbO phase modulator that demonstrates an unprecedented measured electro-optic (EO) response up to 500 GHz. Shallow rib waveguides are utilized for guiding a single transverse electric (TE) optical mode, and Au coplanar waveguides (CPWs) support the modulating radio frequency (RF) mode. Precise index matching between the co-propagating RF and optical modes is responsible for the device's broadband response, which is estimated to extend even beyond 500 GHz. Matching the velocities of these co-propagating RF and optical modes is realized by cladding the modulator's interaction region in a thin UV15 polymer layer, which increases the RF modal index. The fabricated modulator possesses a tightly confined optical mode, which lends itself to a strong interaction between the modulating RF field and the guided optical carrier; resulting in a measured DC half-wave voltage of 3.8 V·cm. The design, fabrication, and characterization of our broadband modulator is presented in this work.

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Engineered Thin Film Lithium Niobate Substrate for High Gain-Bandwidth Electro-optic Modulators

Cited by 7 publications

References 4 publications

Integrated photonics on thin-film lithium niobate

Integrated photonics on thin-film lithium niobate

Superconducting Acousto-optic Phase Modulator

Thin film lithium niobate electro-optic modulator with terahertz operating bandwidth

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