Engineering cationic defects in transparent tin oxide superlattices

The cationic interstitials induced resistive switching: A case study on Mn-doped SnO2

“…It has been confirmed in our previous work that the stable multi-level RS can be observed only in 12.5 mol-% Mn-doped SnO 2 rather than pure SnO 2 or lower Mn-doping concentrations [27]. Together with the calculated defect formation energy results in Figure 2 and additional XPS and I-V characterisations in the ESI, it is reasonable to believe that by increasing the Mndoping concentration and synthesising the Mn-doped SnO 2 under Sn-rich/O-poor condition, the formation of Mn interstitials can be significantly improved, which is critical in achieving multi-level RS.…”

“…To investigate the RS behaviour triggered by Mn interstitials, the Au/Mn-SnO 2 /Au RRAMs have been fabricated for current-voltage (I-V) tests. The detailed fabrication methods and characterisations can be found in our previous works [27,28]. The calculated crystal parameter and TEM images of highly self-assembled Mn-doped SnO 2 nanoparticles are provided in It has been reported that the migration energy barrier of cationic interstitial is higher than that of V O [12].…”

Cationic Interstitials: An Overlooked Ionic Defect in Memristors

“…•C int -induced Multi-level RS Multilevel RS has also been investigated in C int -induced memristors. Intrinsic multi-state RS behavior with good endurance and stability has been observed in Mn-doped SnO 2based memristor by increasing the Mn-doping concentration, as it is illustrated in Figure 2C (Xu et al, 2018). By comparing the RS behavior of Mn-doping, Al-doping, and In-doping in SnO 2 together with the XPS results and the calculated defect formation energies, the multi-level RS has been ascribed to Mn int instead of Vo.…”

“…The enhanced RS is ascribed to the increased trapped states between the equilibrium Fermi level and conduction band by Ru int and Al int (Li et al, 2014). Mn int s have been achieved in SnO 2 by increasing the Mndoping level to 12.5 mol% in the liquid-liquid interface hydrothermal process and compared to the pure SnO 2 with Vo, Mn-doped SnO 2 memristor shows more effective and stable RS with significantly larger ON/OFF ratio and better intermediate state retention (Xu et al, 2018).…”

“…Copyright 2015, Elsevier B.V.) and (B) CeO 2 /Ti/CeO 2 (reproduced with permission (Rana et al, 2017). Copyright 2017; the multilevel RS and the cross-section images of the device based on (C) Mn-doped SnO 2 (reproduced with permission (Xu et al, 2018). Copyright 2018, Elsevier Ltd.) and (D) CH 3 NH 3 PbI 3 thin films (reproduced with permission (Choi et al, 2016).…”