Engineering in SnS-Based Solar Cell for an Efficient Device with Nickel Oxide (NiO) as the Hole Transport Layer

Ray, Shivendra Pratap; Sadanand, Sadanand; Lohia, Pooja; Dwivedi, D. K.

doi:10.5185/amlett.2021.091664

Cited by 4 publications

(1 citation statement)

References 16 publications

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“…Such an increase in carrier recombination subsequently leads to a decrease in the V oc . [ 29 ] However, it appears that the V oc stabilizes after the 1.0 × 10 19 cm −3 threshold. This is because the recombination rate did not change substantially after this point.…”

Section: Analysis and Resultsmentioning

confidence: 99%

Investigating the Impact of Interfacial Layers on Device Performance of Highly Stable Cs₂InBiBr₆Based Double Perovskite Solar Cells

Meng,

Elumalai,

Mehdizadeh‐Rad

et al. 2023

Advcd Theory and Sims

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Perovskite solar cells, a third‐generation photovoltaic technology, have recently emerged as a game‐changing innovation. However, lead (Pb) is a toxic heavy metal, and it is crucial to explore lead‐free perovskite solar cells with continuously improving efficiency for long‐term development. Recently, materials researchers have discovered a lead‐free double perovskite solar cell material, Cs2InBiBr6 with a small direct bandgap of 1.27 eV and strong thermodynamic and mechanical structural stability. The power conversion efficiency of Cs2InBiBr6‐based perovskite solar cells is not reported yet. To investigate its potential, a solar cell capacitance simulator to analyze the solar cell structure of FTO (Fluorine Doped Tin Oxide)/ETL (Electron Transport Layer)/Cs2InBiBr6/HTL (Hole Transport Layer)/Au, selecting appropriate hole transport materials and electron transmission materials to achieve high efficiency is used. Moreover, this study explores the impact of several factors, including absorber layer thickness, acceptor and donor doping density, and the influence of total defect density of the perovskite and interface layers on the performance of solar cells. Advanced device characterization methods such as Mott‐Schottky analysis are performed to unravel the effect of interfaces on the device performance. The solar cell with the device structure FTO/TiO2/Cs2InBiBr6/Cu2O/Au achieves an outstanding PCE of 23.64% demonstrating the immense potential of Cs2InBiBr6 as a lead‐free double perovskite solar cell absorber layer.

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Section: Analysis and Resultsmentioning

confidence: 99%

Investigating the Impact of Interfacial Layers on Device Performance of Highly Stable Cs₂InBiBr₆Based Double Perovskite Solar Cells

Meng,

Elumalai,

Mehdizadeh‐Rad

et al. 2023

Advcd Theory and Sims

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A simulation study of quantum dot solar cells using two distinct ETL of WO3 and WS2

et al. 2023

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Quantum dot solar cells (QDSCs) have recently attracted a lot of interest since the materials used in them are eco-friendly, good light harvesters, and cheap. Solar Cell Capacitance Simulator-1 dimensional software (SCAPS-1D) is used to carry out this numerical analysis. In the present work, the optimization of two different device architectures is investigated having WO 3 and WS 2 two different electron transport layer(ETL). In the proposed device structure, Sb 2 Se 3 is used as an absorber layer and PbS is used as HTL and CdS is used as a buffer layer. The main objective of this effort is to determine how changing from the WO 3 ETL to the WS 2 ETL affects the photovoltaic parameters. Initially, the solar photovoltaic device is optimized, and then the effect of doping concentrations is investigated. In addition, the effect of series and shunt resistance on the solar device's performance is examined to illustrate the impact of series and shunt resistance on the device's performance. The effect of increasing temperature on the PV parameters is also studied and it is observed that the solar device is temperature-sensitive. Finally, the optimized performance with WS 2 ETL with PCE of 20.60% is achieved.Author contributions: Naureen, Sadanand and Shambhavi Rai analyze the device structure, simulation study and drafted the manuscript. R.K.Yadav, Pooja Lohia and D.K. Dwivedi updated the draft le of manuscript.

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Investigating a Pb-free n-i-p perovskite solar cell with BFCO absorber using SCAPS-1D

Mahammedi,

Benameur,

Gueffaf

et al. 2024

Optik

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Engineering in SnS-Based Solar Cell for an Efficient Device with Nickel Oxide (NiO) as the Hole Transport Layer

Cited by 4 publications

References 16 publications

Investigating the Impact of Interfacial Layers on Device Performance of Highly Stable Cs₂InBiBr₆Based Double Perovskite Solar Cells

Investigating the Impact of Interfacial Layers on Device Performance of Highly Stable Cs₂InBiBr₆Based Double Perovskite Solar Cells

A simulation study of quantum dot solar cells using two distinct ETL of WO3 and WS2

Investigating a Pb-free n-i-p perovskite solar cell with BFCO absorber using SCAPS-1D

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Engineering in SnS-Based Solar Cell for an Efficient Device with Nickel Oxide (NiO) as the Hole Transport Layer

Cited by 4 publications

References 16 publications

Investigating the Impact of Interfacial Layers on Device Performance of Highly Stable Cs2InBiBr6Based Double Perovskite Solar Cells

Investigating the Impact of Interfacial Layers on Device Performance of Highly Stable Cs2InBiBr6Based Double Perovskite Solar Cells

A simulation study of quantum dot solar cells using two distinct ETL of WO3 and WS2

Investigating a Pb-free n-i-p perovskite solar cell with BFCO absorber using SCAPS-1D

Contact Info

Product

Resources

About

Investigating the Impact of Interfacial Layers on Device Performance of Highly Stable Cs₂InBiBr₆Based Double Perovskite Solar Cells

Investigating the Impact of Interfacial Layers on Device Performance of Highly Stable Cs₂InBiBr₆Based Double Perovskite Solar Cells