Engineering incremental resistive switching in TaO_xbased memristors for brain-inspired computing

Abstract

Brain-inspired neuromorphic computing is expected to revolutionize the architecture of conventional digital computers and lead to a new generation of powerful computing paradigms, where memristors with analog resistive switching are considered to be potential solutions for synapses. Here we propose and demonstrate a novel approach to engineering the analog switching linearity in TaOx based memristors, that is, by homogenizing the filament growth/dissolution rate via the introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. This has effectively mitigated the commonly observed two-regime conductance modulation behavior and led to more uniform filament growth (dissolution) dynamics with time, therefore significantly improving the conductance modulation linearity that is desirable in neuromorphic systems. In addition, the introduction of the DLL also served to reduce the power consumption of the memristor, and important synaptic learning rules in biological brains such as spike timing dependent plasticity were successfully implemented using these optimized devices. This study could provide general implications for continued optimizations of memristor performance for neuromorphic applications, by carefully tuning the dynamics involved in filament growth and dissolution.

Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism

“…Multi-level resistive switching operation of five resistance states using different materials in ITO/RGO/ITO 15 and TiN/Ta 2 O 5 /Pt 16 structures have been demonstrated. Several research groups have reported multi-level switching operation with multiple states for brain-inspired neuromorphic applications 17, 18 . However there is no report on tunable multi-level resistive switching characteristics of the BaTiO x switching material in Cr/BaTiO x /TiN structure and its transport mechanism in each level is not reported yet.…”

Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device

“…The diffuse process with time meets ~e −t/τ , as schematically illustrated in Fig. 4g 13 . However, it was different to fit the current decay curves with respect to time perfectly as e -t/τ at all time scale.…”

Controlling Conductive Filament and Tributyrin Sensing Using an Optimized Porous Iridium Interfacial Layer in Cu/Ir/TiNxOy/TiN

“…During the SET process, the device is programmed at self-compliance mode with a stop voltage of +0.8 V ( Figure S17a, Supporting Information). Wang et al have shown 27 conduction states in the TiN/SiO 2 /TaO x /Pt structure [51] and 15 conduction states in the Al/CuPc/LiF/ITO structure [18] at the SET condition. Afterward, the device is allowed to partially RESET at a stop voltage of −0.6 V ( Figure S17b, Supporting Information).…”