Engineering of electronic and optical properties of PbS thin films via Cu doping

Touati, Baligh; Gassoumi, Abdelaziz; Dobryden, Illia; Natile, Marta Maria; Vomiero, Alberto; Kamoun‐Turki, Najoua

doi:10.1016/j.spmi.2016.07.025

Cited by 29 publications

(12 citation statements)

References 30 publications

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“…The estimated dislocation density value is found to be 4.9x10 14 lines/m 2 . Similar results for PbS film have been observed in the literature [33,36].…”

Section: Resultssupporting

confidence: 91%

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CHARACTERIZATION OF PbS FILM PRODUCED BY CHEMICAL BATH DEPOSITION AT ROOM TEMPERATURE

Kul¹

2019

Anadolu Üniversitesi Bilim Ve Teknoloji Dergisi - B Teorik Bilimler

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PbS film has been produced by chemical bath deposition (CBD) method onto glass substrates using aqueous solution containing Pb(NO3)2, Na2SO3, NaOH and SC(NH2)2. The deposition was carried out at room temperature of 26°C and a stirring speed of 60 rpm for an hour. The PbS film has been characterized by x-ray diffraction, field emission scanning electron microscopy, Fourier transform infrared spectroscopy, Raman spectroscopy and optical absorption spectroscopy techniques. The PbS film is polycrystalline face centered cubic phase having randomly preferential orientation in the [101], [200], [220] and [400] directions. The texture coefficient, lattice parameter, strain, crystallite size, and dislocation density were estimated from x-ray diffraction results. Fourier transform infrared result reveals that the presence of PbS and various functional groups in PbS sample. Raman spectrum of the sample shows PbS phase and lead oxysulfates. The optical band gap of the PbS film has been studied using the optical absorbance measurement as a function of wavelength between 200 and 2750 nm. The optical direct band gap of the sample is calculated to be 1.28 eV. The optical band gap of PbS sample exhibited a blue-shift compared with that of bulk PbS.

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“…The estimated dislocation density value is found to be 4.9x10 14 lines/m 2 . Similar results for PbS film have been observed in the literature [33,36].…”

Section: Resultssupporting

confidence: 91%

“…Materials with an average crystallite size not exceeding about 100 nm are generally referred to as nanocrystalline or nanostructured [34]. The mean crystallite size of the sample is comparable with the results of literature [17,33,[35][36][37].…”

Section: Resultssupporting

confidence: 81%

CHARACTERIZATION OF PbS FILM PRODUCED BY CHEMICAL BATH DEPOSITION AT ROOM TEMPERATURE

Kul¹

2019

Anadolu Üniversitesi Bilim Ve Teknoloji Dergisi - B Teorik Bilimler

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“…3h, but with slightly lower values and variation between experiments, especially for the two most doped samples. These findings agree well with expectations due to the doping with Cu 2+ and with Hall effect measurements reported previously [29], where the resistivity has significantly decreased from pure to Cu-doped PbS.…”

Section: Surface Morphology and Topography Studiessupporting

confidence: 93%

Morphological and electrical characterization of Cu-doped PbS thin films with AFM

Dobryden¹,

Touati²,

Gassoumi³

et al. 2017

Adv. Mater. Lett.

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Lead sulphide (PbS) is a direct band gap IV-VI intrinsic p-type semiconductor with good potential for application in solar cells, sensors, etc. Doping the films with Cu 2+ ions may improve the electrical properties. Here, Cu-doped PbS films were deposited on conducting glass substrates. The morphology, topography and thickness of the doped PbS films were examined using atomic force microscopy (AFM) and high-resolution SEM. AFM analysis showed decreasing surface roughness and grain size with the increase of Cu 2+ concentration from 0.5 to 2.0 at%. Local surface electrical measurements using conducting AFM and Kelvin probe force microscopy showed the possibility to probe semi-quantitatively the changes in surface potential, work function, and Fermi level upon doping of the films. The estimated apparent work function for the undoped PbS grains in the film was slightly above 4.5 eV, while it decreased to a minimum value of 4.43-4.45 eV at 1-1.5 at% Cu-doping. Conducting AFM measurements showed that local resistance of the doped samples is lower than on pure PbS films. These results indicate Cu doping as an effective strategy to tune the electrical properties of PbS thin films toward the development of suitable optically active materials for application in photovoltaics.

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“…Touati et al obtained the same behavior for PbS thin doped with Cu metal. 47 The lm's transparency of pure PbS below 900 nm increases with increasing Cr doping ratio. This behavior can be attributed to the grain growth seen in SEM results, giving rise to less scattering effects from the grain boundaries.…”

Section: Optical Propertiesmentioning

confidence: 99%

The structure and photoelectrochemical activity of Cr-doped PbS thin films grown by chemical bath deposition

2020

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Engineering of electronic and optical properties of PbS thin films via Cu doping

Cited by 29 publications

References 30 publications

CHARACTERIZATION OF PbS FILM PRODUCED BY CHEMICAL BATH DEPOSITION AT ROOM TEMPERATURE

CHARACTERIZATION OF PbS FILM PRODUCED BY CHEMICAL BATH DEPOSITION AT ROOM TEMPERATURE

Morphological and electrical characterization of Cu-doped PbS thin films with AFM

The structure and photoelectrochemical activity of Cr-doped PbS thin films grown by chemical bath deposition

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