Engineering Silver Nanowire Networks: From Transparent Electrodes to Resistive Switching Devices

Abstract

Metal nanowires (NWs) networks with high conductance have shown potential applications in modern electronic components, especially the transparent electrodes over the past decade. In metal NW networks, the electrical connectivity of nanoscale NW junction can be modulated for various applications. In this work, silver nanowire (Ag NW) networks were selected to achieve the desired functions. The Ag NWs were first synthesized by a classic polyol process, and spin-coated on glass to fabricate transparent electrodes. The as-fabricated electrode showed a sheet resistance of 7.158 Ω □ with an optical transmittance of 79.19% at 550 nm, indicating a comparable figure of merit (FOM, or Φ) (13.55 × 10 Ω). Then, two different post-treatments were designed to tune the Ag NWs for not only transparent electrode but also for threshold resistive switching (RS) application. On the one hand, the Ag NW film was mechanically pressed to significantly improve the conductance by reducing the junction resistance. On the other hand, an Ag@AgO core-shell structure was deliberately designed by partial oxidation of Ag NWs through simple ultraviolet (UV)-ozone treatment. The Ag core can act as metallic interconnect and the insulating AgO shell acts as a switching medium to provide a conductive pathway for Ag filament migration. By fabricating Ag/Ag@AgO/Ag planar structure, a volatile threshold switching characteristic was observed and an on/off ratio of ∼100 was achieved. This work showed that through different post-treatments, Ag NW network can be engineered for diverse functions, transforming from transparent electrodes to RS devices.

Silver nanowire/nickel hydroxide nanosheet composite for a transparent electrode and all-solid-state supercapacitor

“…shows the morphologies of Ag NWs and Ni(OH) 2 NSs. Similar to the results in our previous work,14 the Ag NWs have a relatively uniform length and diameter, as shown inFig. 1a-c.…”

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

“…[275][276][277][278][279][280][281][282][283] In the following, resistive switching in stacked and planar devices based on NW networks is described. Resistive switching networks based on random ordered nanowires, dendritic, and fractal structures have attracted great attention because of the peculiar conduction properties that make these structures promising for resistive switching and neuromorphic applications.…”

“…[275,277,[280][281][282][283] Thus, the global resistive switching behavior of the network arises from resistive switching events located at the numerous wire interconnections. Indeed, the NW network global properties arise from junctions between individual wires that determine the network connectivity.…”

Biomimic Vein-Like Transparent Conducting Electrodes with Low Sheet Resistance and Metal Consumption

“…Perforated TCEs are a promising route to fulfil the requirements for the above-mentioned applications and therefore have been intensively investigated recently. Solution-processed Ag nanowire networks [20][21][22][23][24][25][26][27][28][29][30][31], Cu nanowire networks [32], lithographically fabricated metal meshes [33], and some novel approaches using cracked polymers [34], cracked TiO 2 thin layers [35], In 2 O 3 grain boundary lithography [36], cracked silica nanoparticle thin layers [37], and nanotrough [38] have been proposed. The published results for R sh values below 10 Ω □ −1 combined with T values of approximately 80% along with those obtained in this work are summarized in Fig.…”