2023
DOI: 10.14356/kona.2025001
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Engineering SiO<sub>2</sub> Nanoparticles: A Perspective on Chemical Mechanical Planarization Slurry for Advanced Semiconductor Processing

Ganggyu Lee,
Kangchun Lee,
Seho Sun
et al.

Abstract: Chemical mechanical polishing (CMP) is a process that uses mechanical abrasive particles and chemical interaction in slurry to remove materials from the surface of films. With advancements in semiconductor device technology applying various materials and structures, SiO 2 (silica) nanoparticles are the most chosen abrasives in CMP slurries. Therefore, understanding and developing silica nanoparticles are crucial for achieving CMP performance, such as removal rates, selectivity, decreasing defects, and high uni… Show more

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