Describing the origin of uniaxial magnetic anisotropy (UMA) is generally problematic in systems other than single crystals. We demonstrate an in-plane UMA in amorphous CoFeB films on GaAs(001) which has the expected symmetry of the interface anisotropy in ferromagnetic films on GaAs(001), but strength which is independent of, rather than in inverse proportion to, the film thickness. We show that this volume UMA is consistent with a bond-orientational anisotropy, which propagates the interface-induced UMA through the thickness of the amorphous film. It is explained how, in general, this mechanism may describe the origin of in-plane UMAs in amorphous ferromagnetic films. PACS numbers: 75.30.Gw, 75.50.Kj, Magnetic materials possessing a uniaxial magnetic anisotropy (UMA) find many important applications in fields such as information storage and magnetic field sensors. For example, materials possessing a uniaxial perpendicular to the plane magnetic anisotropy (PMA) have been used in magnetic recording media such as hard disk drives (HDD), while ferromagnetic (FM) thin-films with an in-plane UMA component, particularly CoFe-based alloys, are becoming increasingly important for applications in the rapidly developing field of spintronics. In particular, CoFeB thin-films are routinely used in a range of studies including tunneling magnetoresistance 1 and current induced magnetization switching 2 , and are utilized in commercial applications such as HDD read-heads and magnetic random access memories. Therefore, proper understanding of the microstructural origins of the anisotropy in this system is of great technological, in additional to fundamental, importance.In magnetic thin-films, the 'effective' magnetic anisotropy constants (K eff ) are generally described in terms of volume (K vol ) and interface (K int ) contributions aswhere a = U(⊥), 1, 2, etc. describe uniaxial (perpendicular), first and second order cubic anisotropies, and so forth, and t M is the magnetic film thickness. Magnetocrystalline anisotropy, having its origin in spin-orbit coupling and reflecting the crystal symmetry, often accounts for the volume contribution in crystalline materials, whereas strain or spin-orbit interactions at the interface can account for the interface contribution. It is also possible for an amorphous material to possess a volume UMA, although it can be unclear exactly what the microstructural origin of such a contribution can be. For example, certain rare earth -transition metal intermetallic (RE-TM) compounds possess a PMA which is a volume contribution. The mechanism for the volume PMA in amorphous RE-TMs has been extensively debated, with 'bondorientational' anisotropy (BOA) emerging as the most commonly suggested mechanism 3-5 . BOA refers to a medium-tolong-range microstructural anisotropy corresponding to orientational correlation of anisotropic local coordination polyhedra 4,6 . The Néel-Taniguchi (N-T) 7 directional pair-ordering model is also frequently suggested; within this model PMA is introduced via anisotropic di...