Engineering the quantum anomalous Hall effect in graphene with uniaxial strains

Diniz, G. S.; Guassi, Marcos Rafael; Qu, Fanyao

doi:10.1063/1.4854415

Cited by 16 publications

(33 citation statements)

References 43 publications

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“…Th : Kane 2005a, Beenakker 2008, Peres 2010, Lau 2013, Wunsch 2008, Kotov 2012, Goerbig 2011, Sarma 2011, Weeks 2011, Diniz 2013, Maher 2013, Park 2009, Pesin 2012, Neto 2009, Vaezi 2013, Hu 2012Exp: Beenakker 2008, Peres 2010, Kotov 2012, Goerbig 2011, Sarma 2011, Maher 2013, Neto 2009, Gomes 2012, Kravets 2013, Ju 2015, Young 2014, Gorbachev 2014germanene Th: Liu 2011, Tabert 2013, Kikutake 2013, Drummond 2012, Ezawa 2012, Tahir 2013, Gupta 2014, Padilha 2013, Pan 2014GaAs/Ge/GaAs Th: Zhang 2013 GaBi; InBi; TlBi Th: Bi4Br4 Th: GeX;SnX;PbX;BiX(X= H, I, Br, Cl, F or OH)…”

Section: Graphenementioning

confidence: 99%

Colloquium: Topological band theory

2016

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The first-principles band theory paradigm has been a key player not only in the process of discovering new classes of topologically interesting materials, but also for identifying salient characteristics of topological states, enabling direct and sharpened confrontation between theory and experiment. We begin this review by discussing underpinnings of the topological band theory, which basically involves a layer of analysis and interpretation for assessing topological properties of band structures beyond the standard band theory construct. Methods for evaluating topological invariants are delineated, including crystals without inversion symmetry and interacting systems. The extent to which theoretically predicted properties and protections of topological states have been verified experimentally is discussed, including work on topological crystalline insulators, disorder/interaction driven topological insulators (TIs), topological superconductors, Weyl semimetal phases, and topological phase transitions. Successful strategies for new materials discovery process are outlined. A comprehensive survey of currently predicted 2D and 3D topological materials is provided. This includes binary, ternary and quaternary compounds, transition metal and f-electron materials, Weyl and 3D Dirac semimetals, complex oxides, organometallics, skutterudites and antiperovskites. Also included is the emerging area of 2D atomically thin films beyond graphene of various elements and their alloys, functional thin films, multilayer systems, and ultra-thin films of 3D TIs, all of which hold exciting promise of wide-ranging applications. We conclude by giving a perspective on research directions where further work will broadly benefit the topological materials field.

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Section: Graphenementioning

confidence: 99%

Colloquium: Topological band theory

2016

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“…As the Berry curvatures are highly peaked around the Dirac points K and K 44 , then a low energy approximation can be used in the calculation of the Chern number 21,45 . In the low energy, we calculate the Chern number using the following equation,…”

Section: Theoretical Modelmentioning

confidence: 99%

“…To reach this goal, an external magnetic field is a potential solution. From the application point of view, however, an internal exchange field (EX) which leads to the majority spin band being completely filled while the minority spin band being empty, provides a more attractive alternative way 1,11,21,22 . As known, the strain-induced pseudomagnetic field B S leads to Landau quantization and edges states that circulate in opposite directions 23,24 .…”

Section: Introductionmentioning

confidence: 99%

“…Thus, without breaking TRS, the strain can induce the gap in the bulk and pseudo-helical gapless edge states. Therefore, strain, EX and SOC can be used as versatile tools to trigger topological QPTs 21,25 . This motivates us to propose a remarkable way in which SOC strength, uniaxial mechanical strain and EX, instead of external magnetic field, are utilized to realize this QPT in graphene nanoribbons (GNRs).…”

Section: Introductionmentioning

confidence: 99%

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Zero-field and time-reserval-symmetry-broken topological phase transitions in graphene

et al. 2015

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We propose a quantum electronic device based on a strained graphene nanoribbon. Mechanical strain, internal exchange field and spin-orbit couplings (SOCs) have been exploited as principle parameters to tune physical properties of the device. We predict a remarkable zero-field topological quantum phase transition between the time-reversal-symmetry broken quantum spin Hall (QSH) and quantum anomalous Hall (QAH) states, which was previously thought to take place only in the presence of finite magnetic field. We illustrate as intrinsic SOC is tuned, how two different helicity edge states located in the opposite edges of the nanoribbon exchange their locations. Our results indicates that the pseudomagnetic field induced by the strain could be coupled to the spin degrees of freedom through the SOC responsible for the stability of a QSH state. The controllability of this zero-field phase transition with strength and direction of the strain is also demonstrated. Our prediction offers a tempting prospect of strain, electric and magnetic manipulation of the QSH effect.

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“…[1,2] This particular material offers an excellent system for studying two-dimensional (2D) physical properties, such as the quantum Hall effects, [3][4][5][6][7][8][9][10][11][12][13][14][15] and these properties could be preliminarily comprehended by the energy dispersion (or called energy band structure), which can directly reflect the main features of electronic properties. In the low-energy region of bands.…”

Section: Introductionmentioning

confidence: 99%