Engineering thermal and electrical interface properties of phase change memory with monolayer MoS2

Neumann, Christopher M.; Okabe, Kye; Yalon, Eilam; Grady, Ryan W.; Wong, H.-S. Philip; Pop, Eric

doi:10.1063/1.5080959

Cited by 43 publications

(45 citation statements)

References 37 publications

(43 reference statements)

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“…Such layered 2D materials are promising as ultralight and compact heat shields, e.g., directing heat away from hot spots in electronics. They could also be used to improve the efficiency of thermoelectric energy harvesters ( 5 ) or that of thermally activated devices like phase-change memories ( 34 ), if the cross-plane electrical conductivity can be simultaneously optimized.…”

Section: Discussionmentioning

confidence: 99%

Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials

et al. 2019

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Heterogeneous integration of nanomaterials has enabled advanced electronics and photonics applications. However, similar progress has been challenging for thermal applications, in part due to shorter wavelengths of heat carriers (phonons) compared to electrons and photons. Here, we demonstrate unusually high thermal isolation across ultrathin heterostructures, achieved by layering atomically thin two-dimensional (2D) materials. We realize artificial stacks of monolayer graphene, MoS2, and WSe2 with thermal resistance greater than 100 times thicker SiO2 and effective thermal conductivity lower than air at room temperature. Using Raman thermometry, we simultaneously identify the thermal resistance between any 2D monolayers in the stack. Ultrahigh thermal isolation is achieved through the mismatch in mass density and phonon density of states between the 2D layers. These thermal metamaterials are an example in the emerging field of phononics and could find applications where ultrathin thermal insulation is desired, in thermal energy harvesting, or for routing heat in ultracompact geometries.

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Section: Discussionmentioning

confidence: 99%

Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials

et al. 2019

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“…Some studies agreed that the structure modification of the entire dielectric layer results in a comprehensive effect on RS behavior [123,131,140]. However, other studies considered that the RS behavior is a regional phenomenon, as illustrated in Figure 6a, which is associated with the contact resistance between the TE and dielectric layer [22,38,[141][142][143].…”

Section: Oxygen Ion-based Switching Mechanismmentioning

confidence: 99%

“…illustrated in Figure 6a, which is associated with the contact resistance between the TE and dielectric layer [22,38,[141][142][143].…”

Section: Oxygen Ion-based Switching Mechanismmentioning

confidence: 99%

Memristive Non-Volatile Memory Based on Graphene Materials

Shen

Zhao

et al. 2020

Micromachines

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Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artificial intelligence (AI), due its advantages such as fast operation speed, low power consumption, and high device density. Graphene and related materials (GRMs), especially graphene oxide (GO), acting as active materials for RRAM devices, are considered as a promising alternative to other materials including metal oxides and perovskite materials. Herein, an overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) behavior, figure of merit (FoM) summary, and prospect extension of GRM-based RRAM devices. With excellent physical and chemical advantages like intrinsic Young’s modulus (1.0 TPa), good tensile strength (130 GPa), excellent carrier mobility (2.0 × 105 cm2∙V−1∙s−1), and high thermal (5000 Wm−1∙K−1) and superior electrical conductivity (1.0 × 106 S∙m−1), GRMs can act as electrodes and resistive switching media in RRAM devices. In addition, the GRM-based interface between electrode and dielectric can have an effect on atomic diffusion limitation in dielectric and surface effect suppression. Immense amounts of concrete research indicate that GRMs might play a significant role in promoting the large-scale commercialization possibility of RRAM devices.

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“…The two‐terminal memristor, whose resistance state strongly depends on its past states, provides an opportunity to mimic the synaptic connections between neurons. Recently, 2D materials have been widely used to reveal the working principle of conductive filament growth and rupture in artificial synapses, [ 179–180 ] improve the performances of conventional metal oxide based memristors, [ 98–99,181–184 ] and develop various vertical memristors with fast switching speed, low threshold voltage and high electrical endurance. [ 10,47,185–192 ] Among these memristors, the sandwiched devices with the ability to hold multilevel nonvolatile states are promising for realizing artificial synaptic devices.…”

Section: D Material‐based Synaptic Devicesmentioning

confidence: 99%

2D Material Based Synaptic Devices for Neuromorphic Computing

Cao

Peng

Chen

et al. 2020

Adv Funct Materials

223

168

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The demand for computing power has been increasing exponentially since the emergence of artificial intelligence (AI), internet of things (IoT), and machine learning (ML), where novel computing primitives are required. Brain inspired neuromorphic computing systems, capable of combining analog computing and data storage at the device level, have drawn great attention recently. In addition, the basic electronic devices mimicking the biological synapse have achieved significant progress. Owing to their atomic thickness and reduced screening effect, the physical properties of 2D materials could be easily modulated by various stimuli, which is quite beneficial for synaptic applications. In this article, aiming at high‐performance and functional neuromorphic computing applications, a comprehensive review of synaptic devices based on 2D materials is provided, including the advantages of 2D materials and heterostructures, various robust multifunctional 2D synaptic devices, and associated neuromorphic applications. Challenges and strategies for the future development of 2D synaptic devices are also discussed. This review will provide an insight into the design and preparation of 2D synaptic devices and their applications in neuromorphic computing.

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Engineering thermal and electrical interface properties of phase change memory with monolayer MoS2

Cited by 43 publications

References 37 publications

Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials

Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials

Memristive Non-Volatile Memory Based on Graphene Materials

2D Material Based Synaptic Devices for Neuromorphic Computing

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