Enhanced and wafer-dependent oxygen diffusion in CZ-Si at 500–700 °C

Abstract

Comment on ''High temperature thermodynamics of palladium-hydrogen. II. Temperature dependence of partial molar properties of dilute solutions of hydrogen in the range 500-700 K [J. Chem. Phys. 65, 3915(1976)] J. Chem. Phys. 68, 3954 (1978); 10.1063/1.436177High temperature thermodynamics of palladium-hydrogen. II. Temperature dependence of partial molar properties of dilute solutions of hydrogen in the range 500-700 K

Rapid thermal processing induced vacancy-oxygen complexes in Czochralski-grown Si1−xGex

“…9 in Ref. [41], the derived effective oxygen diffusivity D eff (*7.6 9 10 -14 cm 2 s -1 ) at 650°C in the present work is also close to the previously reported ones [36][37][38][39][40]. Interestingly, the formation of O 2 dimers at 650°C hardly occurs in CzSi 1-x Ge x , as derived from Fig.…”

“…The calculated oxygen diffusivities of the two oxygen species are also listed in reports [35][36][37][38][39][40]. Moreover, according to Eq.…”

Analysis of the Nucleation Kinetics of Oxide Precipitates in Czochralski Silicon

“…Theoretical models of the diffusion path of the dimer were developed which are in good agreement with the experiments (12,13). The higher diffusivity of O 2 results in deeper out-diffusion of oxygen in the temperature range below 700 °C than it would be expected from the oxygen diffusivity extrapolated from high temperature diffusivities (14)(15)(16). It also results in a higher growth rate of oxide precipitates below 700 °C (17).…”

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments

“…(1) [7][8][9]. The difference in oxygen transport between the temperature ranges is thought to be due to the different species that dominate transport in the two ranges.…”