The hysteresis loop shift in sub-100 nm ferromagnetic-(FM-)antiferromagnetic (AFM) nanostructures can be either enhanced or reduced with respect to continuous films with the same composition, with varying the AFM layer thickness. An enhancement of the coercivity and a reduction of the blocking temperature are also observed. These effects are mainly ascribed to the physical limitations that the dot sizes impose on the AFM domain size and the concomitant weakening of the pinning strength exerted by the AFM during magnetization reversal of the FM. DOI: 10.1103/PhysRevLett.94.117201 PACS numbers: 75.75.+a, 75.60.-d, 75.70.Cn Exchange bias (EB) refers to the shift of the hysteresis loop along the magnetic field axis observed in exchange interacting ferromagnetic-(FM-)antiferromagnetic (AFM) materials. The loop shift is usually accompanied with an enhancement of coercivity [1]. The majority of theoretical models dealing with EB attribute such effects to the formation of domains and pinning of domain walls (DWs) either in the FM [2,3] or in the AFM layer [4,5].During recent decades, EB properties have been extensively investigated, mainly in thin films, due to their technological applications in magnetic random access memories and magnetoresistive read heads based on spin valves or tunnel junctions [6]. Recently, the drastic increase in the areal density of magnetic recording media has motivated the study of EB properties in systems of reduced lateral dimensions [7][8][9][10][11][12][13][14][15][16][17][18][19]. The reduction of the lateral dimensions of an EB system down to length scales comparable to FM or AFM magnetic domain sizes (typically hundreds of nanometers) is also interesting from a fundamental point of view since this results in a confinement and subsequent alteration of the FM and AFM domain structures [10 -13], hence allowing us to probe the role of domains on EB.Although a considerable number of studies have been reported in the literature on micron or submicron spin valve systems [20], the effects of reduced lateral dimensions on EB have been far less investigated. Yet when the dimensions of the FM-AFM nanostructures are reduced down to the magnetic domain sizes, an enhancement of the coercive field, H C [8,9,[11][12][13][14], or changes in the asymmetry of the hysteresis loops have been observed [9,17]. More controversial is the effect of reduced lateral dimensions on the magnitude of the EB field, H E . Indeed, some authors reported that H E is enhanced in nanostructures [7][8][9][10], whereas others observed the opposite trend [11][12][13][14][15][16][17][18]. Up to now, this discrepancy has been attributed to the different materials or the nanostructuring techniques employed.In this Letter, we report on the dependence of EB on the AFM and FM layers thicknesses in sub-100 nm FM-AFM bilayers sputtered on prepatterned Si square dots. We demonstrate that, at room temperature, although all samples were fabricated using the same lithography technique and all of them consist of the same FM and AFM mat...