Enhanced Carrier Multiplication in InAs Quantum Dots for Bulk Avalanche Photodetector Applications

Ma, Yingjie; Zhang, YG; Yuan, Gu; Chen, Xingyou; Wang, Peng; Juang, Bor‐Chau; Farrell, Alan C.; Liang, Baolai; Huffaker, Diana L.; Shi, Yue; Ji, Wenliang; Du, Binyang; Xi, Suping; Tang, Hengjing; Fang, Jiaxiong

doi:10.1002/adom.201601023

Cited by 12 publications

(8 citation statements)

References 38 publications

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“…One way to overcome this drawback is to incorporate the separated absorption, charge, and multiplication avalanche photodiode (SACM-APD) for low noise and high speed applications. 25,26 ■ CONCLUSIONS In summary, we reported the first InAs QD APDs grown on (001) Si using the same epitaxial layers and fabrication process for a QD laser. A low dark current density of 6.7 × 10 −5 A/cm 2 has been achieved, which is more than 2 orders of magnitude lower than Ge/Si APDs.…”

Section: ■ Measurement and Analysismentioning

confidence: 95%

“…The bit error rate (BER) test at different bias points was conducted using an Anritsu Bit Error Rate Tester at 2.5 Gb/s at point. One way to overcome this drawback is to incorporate the separated absorption, charge and multiplication avalanche photodiode (SACM-APD) for low noise and high speed applications 25,26 .…”

Section: (B)mentioning

confidence: 99%

“…The expected high excess noise of the APD also limited the signal-to-noise ratio when operated at a high gain bias point. One way to overcome this drawback is to incorporate the separated absorption, charge, and multiplication avalanche photodiode (SACM-APD) for low noise and high speed applications. , …”

Section: Measurement and Analysismentioning

confidence: 99%

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Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

et al. 2020

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Avalanche photodetectors (APDs) on Si operating at optical communication wavelength band are crucial for Si-based transceiver application. In this paper, we report the first O-band InAs quantum dot (QD) waveguide avalanche photodetectors monolithically grown on Si with a low dark current of 0.1 nA at unit gain and a responsivity of 0.234 A/W at 1.310 μm at unit gain (-5V). In the linear gain mode, the APDs have a maximum gain of 198 and show a clear eye diagram up to 8 Gbit/s. These QD-based APDs enjoy the benefit of sharing the same epitaxial layers and processing flow as QD lasers, which could potentially facilitate the integration with laser sources on Si platform.

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Section: ■ Measurement and Analysismentioning

confidence: 95%

Section: (B)mentioning

confidence: 99%

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Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

et al. 2020

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“…Several groups have looked at using multiple quantum wells (MQWs) with the thinking being that electrons will gain more energy by falling from the barrier into the quantum well than a hole would (due to the different band discontinuities), thereby enhancing the β/α ratio [5][6][7]. Other groups have looked at using nanowires [8] and quantum dots [9,10] as means for enhancing the β/α ratio. Recently, some groups have used a Ge absorber grown on a silicon multiplication region as a way to achieve a small β/α ratio at 1310 nm [11].…”

Section: Introductionmentioning

confidence: 99%

Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44

Xie

Liang

et al. 2020

Emerging Imaging and Sensing Technologies for Security and Defence V; And Advanced Manufacturing Technologies for Micro- And Na

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This paper presents the electron and hole avalanche multiplication and excess noise characteristics based on bulk AlAs0.56Sb0.44 p-in and n-i-p homojunction diodes lattice matched to InP, with nominal avalanche region thicknesses of 0.6-1.5 µm. From these, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric field range of 220-1250 kV/cm for α and from 360-1250 kV/cm for β for the first time. Excess noise characteristics suggest an β/α ratio as low as 0.005 for an avalanche region of 1.5 µm in this material, close to the theoretical minimum and significantly lower than AlInAs, InP, or even silicon. This material can be easily integrated with InGaAs for networking and sensing applications, with modeling suggesting that a sensitivity of-32.1 dBm at a bit-error rate (BER) of 1×10-12 at 10 Gb/s at 1550 nm can be realized. This sensitivity can be improved even further by optimizing the dark currents and by using a lower noise transimpedance amplifier.

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“…Various photodetection systems for high‐energy photons have been developed in recent years with wide commercial and scientific applications . Among them, separate absorption and multiplication avalanche photodiodes (SAM‐APDs) composed of photoabsorbers and large bandgap multiplication regions are advantageous for achieving high‐efficient and low‐noise photodetection with high‐energy resolution . Such a detector architecture can be also applied to energy‐sensitive gamma‐ray and X‐ray detection.…”

Section: Introductionmentioning

confidence: 99%

Energy‐Sensitive GaSb/AlAsSb Separate Absorption and Multiplication Avalanche Photodiodes for X‐Ray and Gamma‐Ray Detection

Juang

Chen

Ren

et al. 2019

Advanced Optical Materials

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and multiplication avalanche photodiodes (SAM-APDs) composed of photoabsorbers and large bandgap multiplication regions are advantageous for achieving highefficient and low-noise photodetection with high-energy resolution. [11][12][13] Such a detector architecture can be also applied to energy-sensitive gamma-ray and X-ray detection. A GaAs/AlGaAs SAM-APD comprised of a 4.5 µm absorption region and a staircase-like multiplication region has been developed for X-ray photodetection. [14] Meanwhile, a similar GaAs/ Al 0.8 Ga 0.2 As SAM-APD structure has been also demonstrated to detect soft X-rays at 5.9 keV with a full-width half-maximum (FWHM) of 1.08 keV. [15] However, its spectroscopic characterizations show an undesired secondary peak located at energy lower than the 5.9 keV peak. This is because of 1) different degrees of impact ionization experienced by the electrons and holes; [16][17][18] 2) insufficient layer thickness ratio; [19] and 3) inadequate difference of pair creation energy (PCE) between GaAs and AlGaAs. [20,21] Indeed, the absorption efficiency can be improved by simply increasing the thickness of the absorption layer. Unfortunately, the commonly used (Al)GaAs semiconductors are not able to concurrently offer high-Z (i.e., high atomic number) absorption and large PCE difference within SAM structures for highenergy X-ray or gamma-ray detection.Alternatively, the antimony-based (Sb-based) SAM-APD structure with high-Z GaSb and large bandgap AlAsSb is promising. GaSb absorbers can provide a much higher probability than GaAs to stop X-ray and gamma-ray photons at a given energy due to a relatively higher Z. [22] In addition, the GaSb/AlAsSb material system provides a larger dissimilarity in both PCE and absorption efficiency. [23,24] This allows for a significant suppression of spurious photopeaks, which are generated outside the intended absorption regions. The combination of these unique capabilities shows promise for achieving X-ray and gamma-ray detectors with high spectroscopic performance. To prove the concept, we develop GaSb/AlAsSb SAM-APDs composed of 2 µm GaSb absorbers and AlAsSb digital alloy multiplication regions to detect X-ray and gamma-ray photopeaks under irradiation from 241 Am sources. Due to the reduced high-peak electric Demonstrated are antimony-based (Sb-based) separate absorption and multiplication avalanche photodiodes (SAM-APDs) for X-ray and gamma-ray detection, which are composed of GaSb absorbers and large bandgap AlAsSb multiplication regions in order to enhance the probability of stopping highenergy photons while drastically suppressing the minority carrier diffusion. Well-defined X-ray and gamma-ray photopeaks are observed under exposure to 241 Am radioactive sources, demonstrating the desirable energy-sensitive detector performance. Spectroscopic characterizations show a significant improvement of measured energy resolution due to reduced high-peak electric field in the absorbers and suppressed nonradiative recombination on surfaces. Additionally, the GaSb/AlAsSb SAM...

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Enhanced Carrier Multiplication in InAs Quantum Dots for Bulk Avalanche Photodetector Applications

Cited by 12 publications

References 38 publications

Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44

Energy‐Sensitive GaSb/AlAsSb Separate Absorption and Multiplication Avalanche Photodiodes for X‐Ray and Gamma‐Ray Detection

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