Enhanced Characteristics of Square-Shaped Extended Source TFET Via Silicon Carbide Polytype (3C-SiC) and a Dopant Pocket Layer

Abstract

In this paper, for the first time, the square-shaped extended source tunneling field-effect transistor (SES TFET) by means of the silicon carbide polytype (3C-SiC) and dopant pocket layer has been presented. By inserting the silicon carbide polytype as substrate and n-type pocket in the channel at the source edge, on-current is increased by about 10 times compared with the conventional SES TFET because of the reduced losses and energy band modification imposed by the silicon carbide and pocket doping, respectively. Additionally, using calibrated simulations, the SES TFET with 3C-SiC substrate and dopant pocket layer is evaluated in terms of various radiofrequency (RF) parameters, including the gate to source capacitance, gate to drain capacitance, trans conductance, channel resistance, transport time delay, cutoff and maximum oscillation frequencies. The simulation results of the SES TFET with the 3C-SiC substrate and dopant pocket layer exhibits a superior switching-state current ratio ( ̴ ̴ 10 13 ) and a small transport time delay (about 0.15 psec) that is a hopeful candidate for conventional SES TFET.

Design of a Digital Tool for Communication and Analysis of Air Quality in Tabasco, Mexico.

“…in Silvaco ATLAS software [29]. The heavily doped pocket and square-shaped extended source regions can be achieved by a tilt angled implant before the gate stack formation and high-energy and low-current boron implantation after the pocket formation [6] [20]. The 3C-SiC is one of silicon carbide polytypes that have been concerned as the today's semiconductor materials.…”

Novel Quantum Structure of an III-V Tunneling Field-Effect Transistor with Source and Channel Heterojunction

“…Basically, the TFET is defined as a reverse biased gated p-i-n device, in which the gate controls the band-to-band tunnelling between the source and the drain through modulation of the position of energy bands. In order to occur band-to-band tunnelling in TFETs, several conditions need to be fulfilled (Ameen, et al, 2019;Marjani and Hosseini, 2015(b); Marjani, et al, 2017;Dorostkar and Marjani, 2018). At first, band alignment of source-channel interface and electron and hole layers of channel are formed properly.…”

Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs

“…The first commercialization of SiC-based devices is the high power Schottky-diodes (Neudeck, et al, 2001). Recently, many different electronic and optoelectronic devices have been demonstrated with silicon carbide include PN diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs), tunneling field-effect transistor(TFET) and lasers polytypes (Marjani, et al, 2011a;Marjani and Marjani, 2012b;Marjani, et al, 2012b;Marjani and Marjani, 2012c;Marjani and Hosseini, 2014;Majdabadi et al, 2014;Marjani and Hosseini, 2015;Sabaghi, et al, 2015;Marjani, et al, 2016a;Marjani, et al, 2016b;Sabaghi, et al, 2016;Marjani, et al, 2017). The silicon carbide has many stable polymorphs including cubic zinc-blende, hexagonal and rhombohedral polymorphs.…”

“…The silicon-carbon bilayers consisting of carbon and silicon layers stack in the primitive unit cell in hexagonal polytypes and rhombohedral polytypes. Figure. 1 shows the lattice structures of the 3C-SiC and 6H-SiC polytypes (Muranaka, et al, 2008;Marjani, et al, 2012b;Marjani and Marjani, 2012a;Marjani, et al, 2017). AlGaN/GaN HEMTs have served as one of the most attractive candidates for future highfrequency integrated circuits due to its compatibility with the industry-matured silicon complementary metal-oxide-semiconductor (Si-CMOS) integrated circuits technologies.…”