Enhanced crystal nucleation in a-SiGe/SiO2 by ion-irradiation assisted annealing

Tsunoda, Isao; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu

doi:10.1016/j.apsusc.2003.08.051

Cited by 26 publications

(28 citation statements)

References 18 publications

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“…It is hence crucial to be able to grow high quality SiGe layers selectively on Si. For GOI structures, currently, many techniques such as oxidation-induced Ge condensation, 12 laser annealing, 13,14 solid-phase crystallization, 15,16 metal-induced lateral crystallization, 17 bonding, 18 and lateral epitaxial growth 19 have been introduced. However, these techniques to obtain GOI structures can be very complicated and have difficulty in achieving high-quality Ge films.…”

Section: High Quality Single-crystal Germanium-on-insulator On Bulk Smentioning

confidence: 99%

High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

Cheng

Park

et al. 2010

Applied Physics Letters

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Germanium-on-insulator (GOI) is desired for high performance metal-oxide-semiconductor transistors and monolithically integrated optoelectronics. We demonstrate a promising approach to achieve single-crystal defect-free GOI by using lateral over-growth through SiO2 window. The dislocations due to the lattice mismatch are effectively terminated and reduced in SiO2 trench by selective area heteroepitaxy combined with hydrogen annealing. Low defect density of 4× 106 cm-2 and low surface roughness of 0.7 nm (root-mean-square) on GOI are confirmed by plan-view transmission electron microscopy and atomic force microscopy analysis. In addition, the excellent metal-semiconductor-metal diode electrical characteristics fabricated on this GOI confirm Ge crystal quality. The selectively grown GOI structure can provide the monolithic integration of SiGe based devices on a Si very large scale integration (VLSI) platform. © 2010 American Institute of Physics

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Section: High Quality Single-crystal Germanium-on-insulator On Bulk Smentioning

confidence: 99%

High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

Cheng

Park

et al. 2010

Applied Physics Letters

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“…In line with this, we have been investigating laser annealing (10), solid-phase crystallization (11)(12)(13)(14)(15) and metal-induced lateral crystallization (MILC) (16)(17)(18)(19) of a-SiGe on insulating films. These approaches are schematically summarized in Fig.2.…”

Section: Low Temperature Sige Growth On Insulating Filmmentioning

confidence: 95%

Recent Progress of SiGe Heterostructure Technologies for Novel Devices

Luna-Sánchez

González-Martínez

2006

ECS Trans.

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The recent progress of SiGe hetrostructure technologies is reviewed by using the authors' results.Low temperature (<550 o C ) methods to achieve SiGe crystals on insulating films are developed by the combination of metal induced lateral crystallization and electric field application. In addition, epitaxial growth of ferromagnetic silicide on Si and Ge substrates becomes possible at 60-300 o C. These results will be the key techniques to open new era of SiGe-based thin film transistors and spintronics devices.

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“…In line with this, we have been investigating laser annealing (10), solid-phase crystallization (SPC) (11)(12)(13)(14)(15) and metal-induced lateral crystallization (MILC) (16)(17)(18)(19) of a-SiGe on insulating films. These approaches are schematically summarized in Fig.2.…”

Section: Introductionmentioning

confidence: 95%

Low Temperature Crystallization of a-SiGe on Insulating Films for Thin Film Transistor Application

et al. 2006

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Development of high-mobility semiconductors is strongly needed to realize high-performance thin-film transistors. To achieve this, we have been investigating low temperature solid-phase crystallization and metal-induced lateral crystallization of a-SiGe on insulating substrates. These realize uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of low temperature SiGe growth and discusses the possible application to thin-film transistors with high speed operation.

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Enhanced crystal nucleation in a-SiGe/SiO2 by ion-irradiation assisted annealing

Cited by 26 publications

References 18 publications

High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

Recent Progress of SiGe Heterostructure Technologies for Novel Devices

Low Temperature Crystallization of a-SiGe on Insulating Films for Thin Film Transistor Application

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