High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

Abstract

Germanium-on-insulator (GOI) is desired for high performance metal-oxide-semiconductor transistors and monolithically integrated optoelectronics. We demonstrate a promising approach to achieve single-crystal defect-free GOI by using lateral over-growth through SiO2 window. The dislocations due to the lattice mismatch are effectively terminated and reduced in SiO2 trench by selective area heteroepitaxy combined with hydrogen annealing. Low defect density of 4× 106 cm-2 and low surface roughness of 0.7 nm (root-mean-square) on GOI are confirmed by plan-view transmission electron microscopy and atomic force microscopy analysis. In addition, the excellent metal-semiconductor-metal diode electrical characteristics fabricated on this GOI confirm Ge crystal quality. The selectively grown GOI structure can provide the monolithic integration of SiGe based devices on a Si very large scale integration (VLSI) platform. © 2010 American Institute of Physics

Modified dislocation filter method: toward growth of GaAs on Si by metal organic chemical vapor deposition

“…Both of these researches used a two-step growth method. Since then, various dislocation reduction techniques such as thermal cycle annealing (TCA) [6], strained-layer superlattices (SLS) [7,8], an amorphous Si buffer layer [9], selective evaporation of dislocated region [10], selective area or patterned growth [11], aspect ratio trapping (ART) [12,13], AlSb buffer layer [14] and compliant substrates [15] have been proposed.…”

Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability

“…17 For the first part of the experiment, 20 nm thick SiO 2 layer was deposited on the Ge layer in a low-pressure chemical vapor deposition (LPCVD) system to avoid surface damage by ion implantation. In order to create intentional Ge point defects (V Ge and Ge i ), Ge ions with dose of 1 Â 10 14 cm À2 were then implanted into the Ge region at 180 keV.…”

Defects in Ge epitaxy in trench patterned SiO2 on Si and Ge substrates

“…The use of trench-patterned SiO 2 templates on substrates for selective heteroepitaxy and subsequent epitaxial lateral overgrowth (ELO) have been shown to substantially reduce the threading dislocation density in highly mismatched systems such as Ge on Si [1][2][3][4][5][6] and GaN on sapphire [7,8]. The reduction in defect density for Ge on Si is attributed to a combination of dislocation glide and trapping at the SiO 2 sidewalls within the narrow channels [4,7].…”