Enhanced deep ultraviolet inverse polarization transmission through hybrid Al-SiO₂ gratings

Abstract

Surface plasmon polariton enhanced electroluminescence and electron emission from electroformed Al-Al2O3-Ag diodes

Pushing the resolution of photolithography down to 15nm by surface plasmon interference

“…First, the Al grating mask is fabricated on the bottom surface of the SiO 2 substrate by using atomic layer deposition, electronic beam lithography and reactive ion etching 24 26 . Second, the Al 2 O 3 spacer layer and the upper Al film are integrated on the Al grating mask of the SiO 2 substrate by using atomic layer deposition 26 or E-beam evaporation 28 . The integrated structure consisting of the SiO 2 substrate, the Al grating mask, the Al 2 O 3 spacer layer and the upper Al film is simply called mask stack.…”

“…The integrated structure consisting of the SiO 2 substrate, the Al grating mask, the Al 2 O 3 spacer layer and the upper Al film is simply called mask stack. Thirdly, the lower Al film is fabricated on the top surface of the Si substrate by using atomic layer deposition 26 . Fourthly, the PR layer is coated on the top surface of the lower Al film.…”

“…The patterns of the PR layer can be transferred into the lower Al film on the Si substrate by using reactive ion etching 24 . Lastly, the patterns of the lower Al film which acts as a metal mask can be transferred into the Si substrate by using dry etching 26 . Similar lithography processes using metal-potoresist-metal multilayer structures were successfully realized in experiments 28 29 30 .…”

“…The surface plasmon interference lithography 11 12 13 14 15 16 17 18 19 , which can employ the interference effect of SPPs to generate sub-diffraction-limit patterns, which is due to the fact that SPPs have a larger wave vector than light waves of the same frequency 11 12 , is perhaps the most promising plasmonic lithography technique for fabricating large-area periodic structures such as an array of nanoparticles 20 21 , an array of nanoholes 22 23 , and an array of nanowires 24 25 26 . Since dielectric-metal multilayer structures support ultra-short wavelength SPPs, the surface plasmon interference lithography method (SPILM) using an 8 pairs of GaN and Al multilayer becomes the highest-resolution SPILM among previous SPILMs 15 .…”

Polarization Control over Deep Ultraviolet Light by Subwavelength Metallic Gratings

“…1(c), η TE of the Al-SiO 2 grating (red circles) is substantially larger than that of the Al-air grating (black squares): an average of 45% increase in the DUV band is obtained. By filling the slits with the substrate material-SiO 2 , the effective refractive index of TE guided mode approaching that of the SiO 2 substrate, leads to this increase in TE transmittance [3]. If we define the inverse polarization extinction ratio as C=10log 10 (ηTE /ηTM), we achieve C=35 dB at λ=196 nm, seen in Fig.…”