Enhanced dielectric properties of highly (100)-oriented Ba(Zr,Ti)O3 thin films grown on La0.7Sr0.3MnO3 bottom layer

Abstract

Barium zirconate titanate Ba͑Zr 0.2 Ti 0.8 ͒O 3 ͑BZT͒ thin films on La 0.7 Sr 0.3 MnO 3 ͑LSMO͒-coated Si and Pt/ Ti/ SiO 2 / Si substrates have been prepared by pulsed laser deposition and crystallized in situ at 650°C.

Effects of grain size on domain structure and ferroelectric properties of barium zirconate titanate ceramics

“…Therefore, the conduction by electron hopping between Ti 4+ and Ti 3+ would be depressed by the substitution of Ti with Zr [6][7][8][9][10][11][12][13]. Ferroelectrics are characterized by ferroelectric domain.…”

Surface chemical states of barium zirconate titanate thin films prepared by chemical solution deposition

“…Many efforts have been made to improve the dielectric properties of the BZT thin film capacitors, including using conductive oxide electrodes such as (La 0.7 Sr 0.3 )MnO 3 [12], LaNiO 3 [13,14], and (La 0.7 Ca 0.3 )MnO 3 [15]. Effect of seed layers on dielectric properties of Ba(Zr 0.3 Ti 0.7 )O 3 thin films [16], and infrared optical properties of BZT thin films have been reported [17][18][19].…”

Effects of sintering temperature on the microstructure and dielectric properties of BaZr0.2Ti0.8O3 ceramics

“…Zr 4 þ has been chosen to form Ba(Zr x Ti 1 À x ) O 3 (BZT) ceramics. Furthermore, the electron hopping between Ti 4 þ and Ti 3 þ can also be depressed by the substitution of Ti with Zr [12][13][14][15][16].…”