Enhanced dynamic properties of Ge-on-Si mode-evolution waveguide photodetectors

Palmieri, Andrea; Shafiee, Amin; Alasio, Matteo G. C.; Tibaldi, Alberto; Ghione, Giovanni; Bertazzi, Francesco; Goano, Michele; Vallone, Marco

doi:10.1109/nusod49422.2020.9217719

Cited by 5 publications

(2 citation statements)

References 6 publications

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“…Extensive multiphysics simulations combined with experimental characterization of selected WPD variants can offer a deep understanding of the underlying physical processes, critical to develop guidelines for the design and optimization of integrated optical trasceivers that fulfill the demand of wide bandwidth and high power efficiency. Building upon our previous work [22][23][24][25][26],…”

Section: Introductionmentioning

confidence: 82%

Towards 200 Gbit/s low-bias-operation vertical Ge-on-Si waveguide photodetectors

Alasio¹,

Vallone²,

Tibaldi³

et al. 2023

Preprint

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We discuss the characterization and numerical simulation of vertical Ge-on-Si waveguide photodetectors (WPDs) of the Cisco platform for data communications in the O-band (1.31 μm), with the goal of optimizing their frequency response while integrating them into low-power systems. The photodetectors under test have an electro-optic bandwidth of more than 40 GHz at a standard bias voltage of -2 V. Bandwidths larger than 10 GHz are observed even at zero bias, suggesting that vertical WPDs can be exploited in optical communication systems with minimal power consumption. In fact, the characterization campaign has allowed the validation of a complex multiphysics model that is providing design guidelines towards bandwidths not only wider than 60 GHz at -2 V, suitable for application in 200 Gbit/s systems, but also wider than 40 GHz at zero bias.

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Section: Introductionmentioning

confidence: 82%

Towards 200 Gbit/s low-bias-operation vertical Ge-on-Si waveguide photodetectors

Alasio¹,

Vallone²,

Tibaldi³

et al. 2023

Preprint

View full text Add to dashboard Cite

show abstract

“…Moreover, a large number of silicon photonic links is required to replace the electrical links to convey the information from the memory controller to the OPCMs and vice versa. This requires using a vast number of active devices, such as electro-optical modulators, high-speed integrated photodetectors [126], and additional control units to optically address the OPCM cells. This makes the memory architecture more susceptible to optical loss and crosstalk noise, increases the power consumption and footprint, and diminishes the memory bandwidth [127].…”

Section: G Complexity and Footprint Overheadmentioning

confidence: 99%

A Survey on Optical Phase-Change Memory: The Promise and Challenges

2023

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Silicon photonics (SiPh) technology has facilitated the deployment of integrated photonics across different application domains, from ultra-fast communication in Datacom applications to energy-efficient optical computation in emerging hardware accelerators for machine learning. More recently, the integration of SiPh and phase change materials has created a unique opportunity to realize adaptable, reconfigurable, and programmable photonic platforms. In particular, the nonvolatile programmability in phase change materials has made them a promising candidate for implementing photonic memory cells and architectures. Accordingly, photonic memory systems and even in-memory photonic computing paradigms are on the rise, especially given their potential for improving data access in electronic and photonic processors. However, there are still many challenges in the design and fabrication of phase-change photonic integrated circuits, which need to be addressed. This article presents a comprehensive survey on the recent advances and challenges for the integration of phase change materials with contemporary photonic devices while focusing on the photonic memory application. In particular, we explore phase-change photonic memory from the material level to the architecture level by presenting an overview of different material-level characteristics of phase change materials with their optical, electrical, and thermal properties as well as their integration into SiPh devices and photonic memory architectures and their application for in-memory photonic computing. We also present a comparison with electronic memory and discuss open research challenges that must be addressed to further advance phase-change photonic memory towards successful integration into emerging computing systems.INDEX TERMS Phase change materials, phase-change memory, in-memory photonic computing, photonic integrated circuits, silicon photonics.

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TCAD-Assisted Progress on the Cisco Platform Toward Low-Bias 200 Gbit/s vertical-pin Ge- on-Si Waveguide Photodetectors

Alasio,

Vallone,

Tibaldi

et al. 2024

J. Lightwave Technol.

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We discuss the characterization and numerical simulation of vertical Ge-on-Si waveguide photodetectors (VPIN WPDs) of the Cisco platform for data communications in the O-band (1.31 µm), with the goal of optimizing their frequency response while integrating them into low-power systems. In a large set of WPDs belonging to 6 different structural variants, at a standard bias voltage of −2 V the best specimens exhibit an intrinsic electro-optic bandwidth of more than 40 GHz, which is reduced to about 10 GHz at zero bias. A comprehensive 3D multiphysics model, validated through the characterization campaign, provides design guidelines towards intrinsic bandwidths not only wider than 60 GHz at −2 V, directly suitable for application in 200 Gbit/s systems, but also wider than 40 GHz at zero bias, not including the possible recourse to extrinsic parameter engineering.

show abstract

Enhanced dynamic properties of Ge-on-Si mode-evolution waveguide photodetectors

Cited by 5 publications

References 6 publications

Towards 200 Gbit/s low-bias-operation vertical Ge-on-Si waveguide photodetectors

Towards 200 Gbit/s low-bias-operation vertical Ge-on-Si waveguide photodetectors

A Survey on Optical Phase-Change Memory: The Promise and Challenges

TCAD-Assisted Progress on the Cisco Platform Toward Low-Bias 200 Gbit/s vertical-pin Ge- on-Si Waveguide Photodetectors

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