2016
DOI: 10.1002/aenm.201501793
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Enhanced Electro‐Optical Properties of Nanocone/Nanopillar Dual‐Structured Arrays for Ultrathin Silicon/Organic Hybrid Solar Cell Applications

Abstract: Periodic nanocone–nanopillar dual‐structured arrays are wet chemical etched on 20 μm‐thick crystalline silicon substrates, enabling the realization of excellent light absorption properties and enhanced electrical contact with PEDOT:PSS. The finally textured silicon/PEDOT:PSS thin film hybrid solar cell shows a power conversion efficiency of 12.2%. These results provide a viable route toward high‐performance thin film silicon/polymer hybrid cells by shape‐controlled nanotexturing.

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Cited by 88 publications
(61 citation statements)
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“…Other than the nonoptimized optoelectronic properties of PEDOT:PSS films, the main limitations to the PCEs attainable from PEDOT:PSS/n‐Si HSCs arise from the nonideal qualities of both the PEDOT:PSS/n‐Si junction and the n‐Si/Al back contact . Texturing of the Si substrate is necessary to enhance light harvesting, but is inherently challenging to the formation of conformal PEDOT:PSS/n‐Si contacts . Nonconformal PEDOT:PSS/n‐Si contacts would result in serious carrier recombination at the interface, and thus lower open‐circuit voltages ( V OC ).…”
Section: Introductionmentioning
confidence: 99%
“…Other than the nonoptimized optoelectronic properties of PEDOT:PSS films, the main limitations to the PCEs attainable from PEDOT:PSS/n‐Si HSCs arise from the nonideal qualities of both the PEDOT:PSS/n‐Si junction and the n‐Si/Al back contact . Texturing of the Si substrate is necessary to enhance light harvesting, but is inherently challenging to the formation of conformal PEDOT:PSS/n‐Si contacts . Nonconformal PEDOT:PSS/n‐Si contacts would result in serious carrier recombination at the interface, and thus lower open‐circuit voltages ( V OC ).…”
Section: Introductionmentioning
confidence: 99%
“…For all experiments, the same Si wafer and same surface passivation process were used, i.e., the thickness of Si wafer and the density of surface trap states are almost fixed. Therefore, the minority carrier lifetime is mainly affected by the formation of the PEDOT:PSS/Si heterojunction . The formation junction will result in a strong electrical field near the Si/PEDOT:PSS interface, which is believed to induce accumulations of holes near the n‐Si surface and produce an inversion layer.…”
Section: Resultsmentioning
confidence: 99%
“…The n -type-doped Si with a thickness of 300 μm and a resistivity of 1~5 Ω·cm (i.e., doping concentration, 1.0~4.7 × 10 15  cm –3 ) was used in our experiment, which is well matched with p -type PEDOT:PSS. Detailed experimental fabrication process can be found in our previous publications [6, 8, 13, 16]. A highly conductive PEDOT:PSS with thickness of ~103 nm was spin coated on the front surface of Si to work as an antireflection and hole-conductive layer [20], as well as to form a junction [21].…”
Section: Methodsmentioning
confidence: 99%
“…In particular, a p -type polymer of poly(3,4-ethylenedioxy thiophene):polystyrenesulfonate (PEDOT:PSS) with a relatively high work function and a wide bandgap has been widely used in HHSCs as a hole-conductive material [47]. According to previous reports, power conversion efficiencies (PCEs) of over 13% have been achieved for PEDOT:PSS/Si HHSCs by a simple spin-coating method, demonstrating their great potentials in future photovoltaic application [816]. …”
Section: Introductionmentioning
confidence: 99%