Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

Abstract

A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how low levels of lattice amorphization induced by ion irradiation influence anodization. First, it superposes a chemical etching effect which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model which explains all observed all effects produced by a range of ion types from helium to cesium over a wide range of fluences and irradiation geometries.2

Transformation and degradation of metal halide perovskites induced by energetic electrons and their practical implications

“…In situ TEM-based irradiation and characterization combined with computational modelling and simulation studies [143,[200][201][202][203][204][205][206] will provide solid qualitative and quantitative understandings for further improving the precision of nanofabrication. As electron beam-based modification and deposition are effective only to certain types of materials, such as halides, oxides and organic materials, focused ion and laser beam techniques [122][123][124][207][208][209][210][211][212][213][214]] should be integrated with those based on electrons so that a broader range of micro-and nanostructures made of a variety of materials can be produced for realizing different functionalities.…”