Enhanced electron field emission from micropatterned pyramidal diamond tips incorporating CH4/H2/N2 plasma-deposited nanodiamond

Subramanian, K.A.; Kang, W.P.; Davidson, J.L.; Takalkar, R.; Choi, B.K.; Howell, M.; Kerns, D.V.

doi:10.1016/j.diamond.2005.12.047

Cited by 41 publications

(18 citation statements)

References 13 publications

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“…In the case of field emission from diamond, the effective field enhancement factor ␤ depends not only on the emitter geometry but also the material composition, viz., sp 2 carbon and dopant concentration. 7,22 The increased sp 2 -carbon content and nitrogen incorporation in nanodiamond also affect the electric field in the diamond film and reduce the barrier for electron emission. Hence, the total ␤ factor may be expressed as the product of the following components:…”

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confidence: 99%

“…With a small grain size ͑1 -100 nm͒ and smooth surface morphology, nanodiamond also holds unique properties including deliberate and controlled amounts of sp 2 -carbon content, 4 and n-type electrical conductivity at room temperature occurring from easier nitrogen incorporation into the grain boundaries, 5-8 which can enhance electron emission. 7,9,10 A key parameter for electronic device design is the operating voltage, as reduced device voltages offer better power and thermal management. A laterally configured field emission device can result in low turn-on and operating voltages and enhanced performance, owing to the highresolution lithography control over the physical design parameters, viz., interelectrode gap, emitter geometry, and large-area array structure.…”

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Nanocrystalline diamond lateral vacuum microtriode

Subramanian

Kang

Davidson

2008

Applied Physics Letters

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A vacuum field emission microtriode in lateral configuration utilizing nanocrystalline diamond is presented. The nanodiamond lateral triode is a completely integrated device comprising a fingerlike emitter geometry with an ∼15nm tip radius of curvature, built-in gate, and anode with gate-cathode spacing of 3μm and anode-cathode spacing of 12μm. Triode characteristics, demonstrating gate-controlled emission current modulation with an anode current of 4μA and high transconductance of 0.3μS from a single emitter-finger at low device voltages (Vg<40V and Va∼65V), are obtained. The anode-induced electron emission conforms to Fowler–Nordheim tunneling. These observations from the first diamond lateral vacuum microtriode demonstrate a robust device for integrated circuit-compatible, temperature-, and radiation-insensitive vacuum micro-nanoelectronics.

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confidence: 99%

Nanocrystalline diamond lateral vacuum microtriode

Subramanian

Kang

Davidson

2008

Applied Physics Letters

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“…On etching the active silicon layer of the SOI wafer, the isolation of the nanodiamond lateral electrodes is achieved by means of the underlying 4 mm thick SiO 2 layer. The properties of the nanodiamond film have been examined and quantified (Subramanian et al 2005a(Subramanian et al , 2006a. The scanning electron microscopy (SEM) of a microfabricated nanodiamond lateral FE diode is shown in figure 1.…”

Section: (B ) Experimentalmentioning

confidence: 99%

“…Nitrogen-incorporated nanodiamond has proved to be an efficient electronemitting material (Zhou et al 1997;Wu et al 1999;Wang et al 2003;Subramanian et al 2006a). The characteristic properties of the nanodiamond film including smaller grain size (5-10 nm; Subramanian et al 2005a), smoother surface morphology, increased sp 2 -carbon content and higher electrical conductivity (Subramanian et al 2006a,b) favour electron field emission (FE).…”

Section: The Nanodiamond Lateral Field Emission Device (A ) Introductionmentioning

confidence: 99%

Forms and behaviour of vacuum emission electronic devices comprising diamond or other carbon cold cathode emitters

Davidson

Kang

Subramanian

et al. 2007

Phil. Trans. R. Soc. A.

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Nanocarbon-derived electron emission devices, specifically nanodiamond lateral field emission (FE) diodes and gated carbon nanotube (CNT) triodes, are new configurations for robust nanoelectronic devices. These novel micro/nanostructures provide an alternative and efficient means of accomplishing electronics that are impervious to temperature and radiation. For example, nitrogen-incorporated nanocrystalline diamond has been lithographically micropatterned to use the material as an electron field emitter. Arrays of laterally arranged 'finger-like' nanodiamond emitters constitute the cathode in a versatile diode configuration with a small interelectrode separation. A low diode turnon voltage of 7 V and a high emission current of 90 mA at an anode voltage of 70 V (electric field of approx. 7 V mm K1 ) are reported for the nanodiamond lateral device. Also, a FE triode amplifier based on aligned CNTs with a low turn-on voltage and a small gate leakage current has been developed.

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“…In addition, a 4×4 tip double-gate FEA was fabricated together with DG. The FEA wafers were fabricated by the molding method [12]- [15] top of the extraction gate separated by 1.2 µm-thick SiON. The diameter of G ex apertures of SG1 and SG2 were equal to 2.3±0.1 µm.…”

Section: Sample and Experimentsmentioning

confidence: 99%

Field-Emission Characteristics of Molded Molybdenum Nanotip Arrays With Stacked Collimation Gate Electrodes

Tsujino

Helfenstein

Kirk

et al. 2010

IEEE Electron Device Lett.

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Double-gate field-emission characteristics of metallic field-emitter-array (FEA) cathodes fabricated by molding with stacked collimation gate electrodes with planar end plane are reported. The collimation of field-emission electron beam with minimal reduction of emission current is demonstrated when a negative bias is applied to the collimation gate, whereas when the two electrodes are at the same potential, the emission characteristic of the double-gate device is the same as that of the single-gate device that shows an emission current of 1 mA from 40 × 40 tip arrays. Results indicate that the device structure of the fabricated double-gate FEAs is promising for high-brilliance cathode applications

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Enhanced electron field emission from micropatterned pyramidal diamond tips incorporating CH4/H2/N2 plasma-deposited nanodiamond

Cited by 41 publications

References 13 publications

Nanocrystalline diamond lateral vacuum microtriode

Nanocrystalline diamond lateral vacuum microtriode

Forms and behaviour of vacuum emission electronic devices comprising diamond or other carbon cold cathode emitters

Field-Emission Characteristics of Molded Molybdenum Nanotip Arrays With Stacked Collimation Gate Electrodes

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