Enhanced electron field emission properties from hybrid nanostructures of graphene/Si tip array

Abstract

Highly efficient with excellent stability electron field emitters based on monolayer graphene coated on wellaligned Si tip (graphene/SiT) arrays fabricated by a simple transfer method are demonstrated. The graphene monolayer is coated on the Si tip array using a chemical vapor deposition process, while the SiTs are prepared through the etching process of a Si substrate. The novel heterostructure field emitter enhanced electron tunneling, as a result, exhibits a better emission property. In addition, the fabricated microplasma devices based on the graphene/SiT heterostructure are closely correlated to the field emission properties of the graphene/SiT materials. The monolayer graphene supported on vertical SiTs provides the protruded nanostructure, which locally enhances the electric field and thus improves the field emission and the plasma illumination characteristics. Experimental Preparation of graphene/SiT arraysA schematic description of the fabrication process of graphene/ SiT array eld emitters is illustrated in Fig. 1. A photoresist (PR, EPG512) lm of thickness 1.0 mm is spin-coated on a Si substrate. This is then patterned by a conventional photolithographic process to form a square periodic pattern of size

High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

“…For example, it has been reported the β of ZnO nanowire arrays is 1064, 33 Ag-nanoparticles-decorated ZnO nanorods is 1593, 34 metallic W nanowire bundles is 3563, 35 and graphene/Si tip arrays is 1000. 36 The resulting high enhancement factor is large due to high aspect ratio of our SiC nanostructures. Therefore, one-dimensional SiC nanowires are regarded as excellent field emitters ascribed to their high enhancement factor, low turn-on field and threshold field.…”

Enhancement of plasma illumination characteristics of few-layer graphene-diamond nanorods hybrid

“…However, the electrons still need to transfer from the graphene to diamond at the tip of FLG-DNRs for field emission. It should be noted that in the case where graphene layers were coated on other kind of sharp templates such as Si-tip arrays [13], Si nano-rod arrays [15] and TiO 2 /diamond like carbon (DLC) films [41], the electrons conducted by the graphene layers could not be efficiently transferred to the emission sites due to the presence of larger barrier between the graphene and the underlying substrate materials. The graphene layers thus did not contribute much to FEE process for these materials, Here it is proposed that the formation of FLG on DNRs in-situ can enhance the overall FEE behavior of the materials because the electrons x can be transferred from the FLG to the DNRs easily, since the FLG was formed via in-situ annealing process.…”

Highly Stable Field Emission from a Tungsten Diselenide Monolayer on Zinc Oxide Nanowire by Geometrically Modulating Hot Electrons

“…Studies have been reported on field emission from 2D materials such as graphene, graphene oxide, MoS 2 , MoSe 2 , WS 2 , and SnS 2 . While most of the early research suggested that the edge structure of 2D materials was more beneficial for field emission owing to its ultrahigh field enhancement factor, recent work has proposed using its surface as a field emitter with a hybrid structure consisting of 2D layered material supported on 1D nanowire (nanotip) . Geometrical modulation of the 2D material by the supporting nanowire has achieved enhanced field emission and high stability with 2D–1D hybrid structure.…”