Enhanced energy-storage performances of (1-x)PbZrO3-xPbSnO3 antiferroelectric thin films under low electric fields

Shangguan, Duandan; Duan, Yinuo; Wang, Binglei; Wang, Chao; Li, Jiaxin; Bai, Yu; Zhang, Fan; Li, Yizhuo; Wu, Yusheng; Wang, Zhan Jie

doi:10.1016/j.jallcom.2021.159440

Cited by 20 publications

(9 citation statements)

References 30 publications

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“…This phenomenon is significantly different from previous reports that doped with smaller ions at Pb 2+ site to improve the AFE phase stability of PZO films, instead, which is similar to that doping smaller ions at Zr 4+ (~0.072 nm) site such as Zr 4+ substituted by Ti 4+ (~0.0605 nm) that improves the FE phase stability. 21,25,27,28 Li + -Al 3+ doping content, the peak position of (200) crystal plane moves to a much higher 2θ degree, while (002) crystal plane is almost unchanged, meaning that Li + -Al 3+ ions are priority to distribute along (100) directions instead of random distribution. In our previous studies, the co-doped ions tend to occupy adjacent Pb 2+ sites to form ionic pair structures in one crystal cell, such as co-doped Li + -La 3+ in PbZrO3 films.…”

Section: Resultsmentioning

confidence: 99%

Tunable polarization-drived superior energy storage performance in PbZrO ₃ thin films

Zhang¹,

Shi²,

Chao³

et al. 2023

Journal of Advanced Ceramics

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Antiferroelectric PbZrO3 films have great potential to be used as the energy storage dielectrics due to the unique electric field-induced phase transition character. But the phase transition process always accompanies polarization hysteresis effect that induces large energy loss and lowers Journal of Advanced Ceramics https://mc03.manuscriptcentral.com/jacer 2 the breakdown strength, leading to inferior energy storage density as well as low efficiency. In this work, the synergistical strategies by doping smaller ions of Li + -Al 3+ to substitute Pb 2+ and lowering the annealing temperature from 700℃ to 550℃ are proposed to change the microstructure and tune the polarization character of PbZrO3 films, excepting to dramatically improve the energy storage performances. The prepared Pb(1-x)(Li0.5Al0.5)xZrO3 (abbreviated as P(1-x)(L0.5A0.5)xZO) films exhibit ferroelectric-like (FE) rather than antiferroelectric (AFE) character once the doping content of Li + -Al 3+ ions reaches 6 mol%, accompanying a significant improvement of energy storage density of 49.09 J/cm 3 , but energy storage efficiency is only 47.94% due to the long-correlation of ferroelectric domains. Accordingly, the low-temperature annealing is carried out to reduce the crystalline degree and the polarization loss. P0.94(L0.5A0.5)0.06ZO films annealed at 550℃ deliver a linear-like polarization rather than ferroelectric-like behavior annealed at 700℃, the lowered remanent polarization as well as improved breakdown strength (4814 kV/cm) result in the superior energy storage density of 58.7 J/cm 3 and efficiency of 79.16%, simultaneously possessing excellent frequency and temperature stability, and good electric fatigue tolerance.

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Section: Resultsmentioning

confidence: 99%

Tunable polarization-drived superior energy storage performance in PbZrO ₃ thin films

Zhang¹,

Shi²,

Chao³

et al. 2023

Journal of Advanced Ceramics

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“…For the doping of A site and B site, the stable antiferroelectric phase is mostly used to improve the energy storage density. [46,78] When the substituted ions have the same valence state as the ions at A site and B site, no extra ion vacancies will be generated. However, due to the different radii of the substituted ions with that of the ions at A site and B site, it would lead to the lattice distortion, which will affect the stability of PZ phase.…”

Section: Process Regulationmentioning

confidence: 99%

“…The replacing of Zr 4+ ions with Sn 4+ ions leads to the distortion of lattice and the increase of the lattice activation energy, which promotes the growth of grain, thus improving the maximum polarization of the PZ anti‐ferroelectric thin films. [ 78 ] However, excessive Sn content would lead to the replacing of the orthorhombic phase with the tetragonal phase, and the tetragonal grains acting as nucleation sites prevented the growth of orthorhombic phase grains, leading to the decrease of the grain size, so excessive Sn content will reduce the maximum polarization. [ 78 ] In addition, the grain boundary increased with the decrease of grain size, which prevented the electric field from entering the grain interior and inhibited domain changing from anti‐ferroelectric to ferroelectric phase, thus increasing the anti‐ferroelectric phase stability.…”

Section: Element Modificationmentioning

confidence: 99%

“…[ 78 ] However, excessive Sn content would lead to the replacing of the orthorhombic phase with the tetragonal phase, and the tetragonal grains acting as nucleation sites prevented the growth of orthorhombic phase grains, leading to the decrease of the grain size, so excessive Sn content will reduce the maximum polarization. [ 78 ] In addition, the grain boundary increased with the decrease of grain size, which prevented the electric field from entering the grain interior and inhibited domain changing from anti‐ferroelectric to ferroelectric phase, thus increasing the anti‐ferroelectric phase stability. [ 78 ] According to the above discussion, when Sn content was 48 mol%, the films obtained the high energy storage density of 6.1 J cm −3 , and the energy storage efficiency of 72%.…”

Section: Element Modificationmentioning

confidence: 99%

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PbZrO₃‐Based Anti‐Ferroelectric Thin Films for High‐Performance Energy Storage: A Review

Wang

Yang

et al. 2023

Adv Materials Technologies

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Energy storage capacitors occupy a large proportion in the pulse power equipment, and they play an important role nowadays. In recent years, anti‐ferroelectric materials have attracted increasing attention of researchers due to their high energy storage density. Compared with the lead‐free anti‐ferroelectric materials, PbZrO3 (PZ)‐based anti‐ferroelectric films are defined as promising electrical energy storage devices for pulsed power systems due to their ultrahigh energy storage density. During the past decade, numerous studies have been reported to develop high‐performance PZ‐based anti‐ferroelectric thin films for electrical energy storage applications. This review focuses on the recent progress of PZ‐based anti‐ferroelectric films for energy storage, and provides various ways, such as element modification (replacing of one element in the ABO3 structure by another element), composite materials (adding secondary phase into PZ films to form composite films), and process improvement (such as the tuning of different bottom electrodes), to improve their energy storage density. Finally, the problems and future development directions of the PZ‐based films are raised.

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“…Recent studies show that shrinking the scale of domain size, weakening the coupling between domains, and reducing the switching energy barrier would result in a thinner hysteresis loop with enhanced W rec and efficiency (η) in RFE . Principally, one needs to suppress the long-range order of the ABO 3 structure for a reduced domain size and enhanced relaxation. − Doping and solid solution are two common ways to suppress the long-range order by introducing local polar heterogeneities, such as defect dipoles or nano polar regions. − However, doping generally tends to induce oxygen/metal vacancies and thus cannot maintain a large breakdown electric field ( E b ) . Solid solution with paraelectric is more effective at suppressing the long-range order but sacrifices the intrinsic polarization, which significantly reduces the P max .…”

Section: Introductionmentioning

confidence: 99%

Enhanced Energy Storage Performance by A–B Site Ambipolar Co-Doping in Antiferroelectrics

Dong

Yang

et al. 2023

ACS Appl. Mater. Interfaces

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Antiferroelectric materials are promising to be used for power capacitive devices. To improve the energy storage performance, solid-solution and defect engineering are widely used to suppress the long-range order by introducing local heterogeneities. However, both methods generally deteriorate either the maximum polarization or breakdown electric field due to damaged intrinsic polarization or increased leakage. Here, we show that forming defect-dipole clusters by A−B site acceptor−donor co-doping in antiferroelectrics can comprehensively enhance the energy storage performance. We took the La−Mn co-doped (Pb 0.9 Ba 0.04 La 0.04 )(Zr 0.65 Sn 0.3 Ti 0.05 )O 3 (PBLZST) as an example. For co-doping with unequal amounts, high dielectric loss, impurity phase, and decreased polarization were observed. By contrast, La and Mn in an equal amount of co-doping can significantly improve the overall energy storage performance. An over 48% increasement in both the maximum polarization (62.7 μC/cm 2 ) and breakdown electric field (242.6 kV/cm) was obtained in 1 mol % La and 1 mol % Mn equally co-doped PBLZST, followed by a nearly two-time enhancement in W rec (6.52 J/cm 3 ) compared with that of the pure matrix. Moreover, a high energy storage efficiency of 86.3% with an enhanced temperature stability over a wide temperature range can be achieved. The defect-dipole clusters associated with charge-compensated co-doping are suggested to contribute to an enhanced dielectric permittivity, linear polarization behavior, and maximum polarization strength compared with that of the unequal co-doping cases. The defect-dipole clusters are suggested to couple with the host, leading to a high energy storage performance. The proposed strategy is believed to be applicable to modify the energy storage behavior of antiferroelectrics.

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Enhanced energy-storage performances of (1-x)PbZrO3-xPbSnO3 antiferroelectric thin films under low electric fields

Cited by 20 publications

References 30 publications

Tunable polarization-drived superior energy storage performance in PbZrO ₃ thin films

Tunable polarization-drived superior energy storage performance in PbZrO ₃ thin films

PbZrO₃‐Based Anti‐Ferroelectric Thin Films for High‐Performance Energy Storage: A Review

Enhanced Energy Storage Performance by A–B Site Ambipolar Co-Doping in Antiferroelectrics

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Enhanced energy-storage performances of (1-x)PbZrO3-xPbSnO3 antiferroelectric thin films under low electric fields

Cited by 20 publications

References 30 publications

Tunable polarization-drived superior energy storage performance in PbZrO 3 thin films

Tunable polarization-drived superior energy storage performance in PbZrO 3 thin films

PbZrO3‐Based Anti‐Ferroelectric Thin Films for High‐Performance Energy Storage: A Review

Enhanced Energy Storage Performance by A–B Site Ambipolar Co-Doping in Antiferroelectrics

Contact Info

Product

Resources

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Tunable polarization-drived superior energy storage performance in PbZrO ₃ thin films

Tunable polarization-drived superior energy storage performance in PbZrO ₃ thin films

PbZrO₃‐Based Anti‐Ferroelectric Thin Films for High‐Performance Energy Storage: A Review