Enhanced ferroelectric properties of Pb(Zr,Ti)O3 films by inducing permanent compressive stress

Lee, Jae-Wung; Park, Gun-Tae; Park, Chee-Sung; Kim, Hyoun‐Ee

doi:10.1063/1.2174094

Cited by 42 publications

(32 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For the latter, it has also been shown that the transition temperature between the antiferrodistortive and cubic phases is reduced by the oxygen vacancy concentrations [125,126]. An original way to engineer this strain is to bend the substrate during deposition and to let it straighten back afterward, therefore inducing an additional static strain [127].…”

Section: Misfit Strainmentioning

confidence: 99%

Strain on ferroelectric thin films

Janolin

2009

J Mater Sci

View full text Add to dashboard Cite

Strain engineering aims to take advantage of the stress field imposed by substrates on thin films. It requires an understanding of the consequences of stress fields on the physical properties of the deposited materials. This is achieved in ferroelectric thin films through the use of misfit-strain phase diagrams that show the stability regions for the possible phases. These encompass bulk phases as well as new ones exhibiting symmetries that are not present in the bulk. For the solid solution lead zirconate-lead titanate, Pb(Zr 1-x Ti x )O 3 , monoclinic phases found in the bulk morphotropic phase boundary region and associated to concentrations exhibiting the highest properties can be stabilized on a wider range of composition in thin films. In addition, phases of lower symmetry can be stabilized through the use of anisotropic biaxial stress fields, generated by orthorhombic substrates for example. Another crucial aspect of the influence of biaxial stress fields is the generation of domain structures. Theoretical tools as well as experimental verifications have provided much insight on the underlying physics. We, therefore, present here an overview of the influence of both iso-and anisotropic biaxial stress fields on the structures and properties of ferroelectric thin films exemplified on Pb(Zr 1-x Ti x )O 3 .

show abstract

Section: Misfit Strainmentioning

confidence: 99%

Strain on ferroelectric thin films

Janolin

2009

J Mater Sci

View full text Add to dashboard Cite

show abstract

“…Regarding the electrical properties with residual stress level, Lee et al reported that the ferroelectric properties of (111) oriented Pb(Zr,Ti)O 3 (PZT) thin films were enhanced by inducing compressive stress, which was introduced during annealing by bending the substrate. 2,3 Tuttle et al 4 have also shown that the highly oriented PZT thin films (thickness is 300 nm) under compressive residual stress exhibited superior ferroelectric properties compared to the bulk polycrystalline ferroelectrics. However, prior studies are mostly based on the epitaxial thin films or require a special fixture to control the stress.…”

mentioning

confidence: 99%

“…[1][2][3] In epitaxial BaTiO 3 thin films, biaxial compressive strain resulted in a higher ferroelectric transition temperature (approximately 500 C) and enhancement of remnant polarization (at least 250%) compared to bulk BaTiO 3 ceramics. 1 The stress magnitude and sign can be controlled by the interface between the film and substrate which have small lattice misfit strain.…”

mentioning

confidence: 99%

Stress-controlled Pb(Zr0.52Ti0.48)O3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O3 film

Han

Ryu

Yoon

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

Polycrystalline Pb(Zr0.52Ti0.48)O3 (PZT) thick films (thickness ∼10 μm) were successfully fabricated by using a novel aerosol deposition technique on Si wafer, sapphire, and single crystal yitria stabilized zirconia (YSZ) wafer substrates with Pt electrodes and their dielectric, ferroelectric, and piezoelectric properties, and in-plane stresses were investigated. The films with different stress conditions were simply controlled by the coefficient of thermal expansion (CTE) misfit of PZT films and substrates. The results showed that the films bearing in-plane compressive stress deposited on the YSZ and sapphire substrates have superior dielectric, ferroelectric (∼90%), and piezoelectric (>200%) properties over that of the Si wafer. Among these three substrates, YSZ shows superior properties of the PZT films. However, films on Si wafer with tensile stress present lower properties. We believed that in-plane compressive stresses within the films are benefited, the formation of c-domain parallel to the thickness direction resulting in the higher piezoelectric properties. These results suggest that the properties of polycrystalline PZT thick films can be adjusted by simply choosing the substrates with different CTEs.

show abstract

“…In order to confirm the consistency and reliability of the force gradient method, we used lead zirconate titanate (PZT) and triglycine sulfate (TGS) samples, which are ferroelectric materials with polarization domains [33][34][35][36][37]. Moreover, it is possible to adopt a cantilever with high stiffness and frequency (K ~42 N/m, 330 kHz) levels, such that it can minimize the effect of humidity and enhance the spatial resolution [19].…”

Section: Materials and Set-upmentioning

confidence: 99%

“…The polarization direction of each domain in the PZT films was randomly oriented. This enabled us to construct arranged domains on the PZT film by applying positive or negative voltage to the probe [36,39]. Additionally, TGS grown by evaporation from aqueous solution was chosen owing to its natural ferroelectric properties [40].…”

Section: Materials and Set-upmentioning

confidence: 99%

Creation of Optimal Frequency for Electrostatic Force Microscopy Using Direct Digital Synthesizer

et al. 2017

View full text Add to dashboard Cite

Electrostatic force microscopy (EFM) is a useful technique when measuring the surface electric potential of a substrate regardless of its topography. Here, we have developed a frequency detection method for alternating current (AC) bias in EFM. Instead of an internal lock-in amplifier (LIA) for EFM that only detects ω e and 2ω e , we have used other LIAs that can amplify the amplitude of specific frequency by direct digital synthesizer (DDS), that finds the optimal frequency of surface charge images. In order to confirm the performance of the proposed methods, the electrical properties of lead zirconate titanate (PZT) and triglycine sulfate (TGS) samples were measured. In addition, we compared the performances of the frequency-detection method and the conventional EFM method. Ultimately, enhanced images could be achieved using the frequency-detection method. The optimal modulated frequency-shift for force-gradient measurements was found to be 2 kHz. Additionally, we have shown that it is possible to use a hard cantilever (K = 42 N/m, 330 kHz). Therefore, we expect that this technique can be applied to measure the electrical properties of bio-molecular films.

show abstract

Enhanced ferroelectric properties of Pb(Zr,Ti)O3 films by inducing permanent compressive stress

Cited by 42 publications

References 18 publications

Strain on ferroelectric thin films

Strain on ferroelectric thin films

Stress-controlled Pb(Zr0.52Ti0.48)O3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O3 film

Creation of Optimal Frequency for Electrostatic Force Microscopy Using Direct Digital Synthesizer

Contact Info

Product

Resources

About