Enhanced ferroelectric properties of predominantly (100)-oriented CaBi4Ti4O15 thin films on Pt∕Ti∕SiO2∕Si substrates

Abstract

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Low‐Temperature Fabrication and Enhanced Ferro‐ and Piezoelectric Properties of Bi3.7Nd0.3Ti3O12 Films on Indium TinOxide/Glass Substrates

“…Thus, the decrease of I (200) / I (117) for the BNT0.3 film prepared at 650°C should result from the competitive growth between (117)‐ and (100)‐oriented grains caused by the minimization of the surface energy. Similar structure evolution has been observed in the predominantly (100)‐oriented SrBi 2 Ta 2 O 9 and CaBi 4 Ti 4 O 15 films fabricated using the same sequential layer annealing method 16,17 . This suggests that the formation of the predominantly (100)‐oriented films by using the sequential layer annealing method is intrinsic for the Bi‐layered perovskite family, i.e., the growth mode should be related to the unique anisotropy of their crystal structures.…”

“…It can be seen that all films exhibit higher relative intensity of (200) peak than the powder. More importantly, the predominantly (100)‐oriented BNT0.3 film can be obtained even at 550°C, which is the lowest annealing temperature for the formation of all predominantly (100)‐oriented Bi‐layered ferroelectric films in the published literatures 9,13,16–18 . The relative intensity of (200) peak [ I (200) / I (117) ] reaches the highest value at 600°C.…”

Structural, ferroelectric and dielectric properties of Na0.5Bi0.5(Ti0.98Fe0.02)O3 thin films on different substrates

“…We ascribe this to the fact that the competitive growth between the (l00)-and (110)-oriented grains inhibits the growth of (110)-oriented grain because the minimization of surface energy can favor the (100)-oriented grain growth in the high temperature. Actually, such a competitive growth phenomenon or similar structure evolution can be frequently observed in CaBi 4 Ti 4 O 15 and BiFeO 3 films [22,23]. During integrating the ferroelectric thin film with the silicon semiconductor substrate, the processing temperature should not to be high in order to prevent the silicon semiconductor to be seriously damaged [24].…”

Low-temperature fabrication and properties of the highly oriented Bi3.15Nd0.85Ti3O12 thin films deposited on different substrates

“…Because the nucleation activation energy for BNdT decreases caused by the BSTMn buffer layer, the relative intensity of (2 0 0) peak [I (2 0 0) /I ( 1 1 7) ] for BNdT on BSTMn is higher than on Pt. The bi-layered perovskite film on Pt usually needs higher annealing temperature to grow (1 0 0)-oriented grains [22]. The little peak marked by filled circle is corresponding to the (1 1 0) peak of BSTMn film.…”