Enhanced field emission from Si doped nanocrystalline AlN thin films

Thapa, Ranjit; Saha, Biswajit; Chattopadhyay, Kalyan Kumar

doi:10.1016/j.apsusc.2008.11.063

Cited by 18 publications

(2 citation statements)

References 23 publications

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“…We think that this may be due to the low precision of our X-ray diffraction and the low thickness of our AlN top layer. In general, only the AlN films with a thickness of a several hundred nanometers can show obvious AlN peaks [ 20 , 21 , 22 ]. However, the thickness of the AlN film in our work is only about 30 nm.…”

Section: Resultsmentioning

confidence: 99%

Novel AlN/Pt/ZnO Electrode for High Temperature SAW Sensors

et al. 2017

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In order to develop a film electrode for the surface acoustic wave (SAW) devices working in high temperature, harsh environments, novel AlN/Pt/ZnO multilayers were prepared using pulsed laser deposition (PLD) systems on langasite (LGS) substrates. The AlN film was used as a protective layer and the ZnO buffer layer was introduced to improve the crystal quality of Pt films. The results show that the resistances of Pt and AlN/Pt film electrodes violently increase above 600 °C and 800 °C, respectively, while the resistances of AlN/Pt/ZnO electrodes have more stable electrical resistance from room temperature to 1000 °C. The AlN/Pt/ZnO electrode, where the ZnO film was deposited at 600 °C, has the best temperature stability and can steadily work for 4 h at 1000 °C. The mechanism underlying the stable resistance of the AlN/Pt/ZnO electrode at a high temperature was investigated by analyzing the microstructure of the prepared samples. The proposed AlN/Pt/ZnO film electrode has great potential for applications in high temperature SAW sensors.

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Section: Resultsmentioning

confidence: 99%

Novel AlN/Pt/ZnO Electrode for High Temperature SAW Sensors

et al. 2017

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“…27,28 Therefore, it can be speculated that the FE behaviors of these two types of doped AlN nanostructures would be different. Though both Si-doped AlN nanoneedle arrays and thin lms showed excellent FE performances, [37][38][39][40] the effects of different doping types on the FE properties of the doped AlN nanostructures has yet to be comparatively studied, which would help clarify the performance modulation of eld emitters. In this study, we synthesized patterned arrays of Si-or Mg-doped AlN nanocones by in situ doping through a Mo grid-masked chemical vapor deposition (CVD) method and examined their FE properties.…”

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confidence: 99%