The doping of titanium group elements (TGE; Ti, Zr, Hf) to MgB 2 is known to improve vortex pinning properties. However, the optimal doping level of each TGE is still a controversial issue. In this study, to improve the critical current density, J c , in high magnetic-field by the TGEdoping, we have studied the vortex pinning properties of (Mg -x 1 TGE x )B 2 samples with x ranging in the interval < < x 0 0.5. The J c of 1.2kAcm −2 at 20K in 3 T for the pristine sample was maximized to 2.9kAcm −2 for the Ti20%-doped sample, 4.9kAcm −2 for the Zr30%doped one, and 5.2 kA cm −2 for the Hf30%-doped one under identical temperature and magnetic field. The irreversibility field, m H 0 irr , of 3.8 T for the pristine sample was also shifted to a higher field of 4.2T, 4.3T and 4.6T by the Ti20%-, Zr30%-and Hf30%-doping, respectively. Microstractural observations suggested that the grain size, shape and distribution of the MgB 2 and impurity phases depended strongly on the species of TGE. We discuss the mechanism of the enhanced vortex pinning properties of the TGE-doped MgB 2 .