2011
DOI: 10.1016/j.jcrysgro.2010.12.029
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Enhanced growth and photoluminescence properties of SnxNy (x>y) nanowires grown by halide chemical vapor deposition

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Cited by 6 publications
(9 citation statements)
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“…8. This is consistent with the fact that tin nitride NWs obtained by halide CVD [18,19] exhibited a broad-symmetric PL spectrum centered at 570 nm whose shape did not change between 77 and 300 K [18] and was very similar to that of SnO 2 NWs shown in Fig. 2.…”
Section: Resultssupporting
confidence: 87%
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“…8. This is consistent with the fact that tin nitride NWs obtained by halide CVD [18,19] exhibited a broad-symmetric PL spectrum centered at 570 nm whose shape did not change between 77 and 300 K [18] and was very similar to that of SnO 2 NWs shown in Fig. 2.…”
Section: Resultssupporting
confidence: 87%
“…It is very likely therefore that the NH 3 favors the reduction of the SnO 2 into Sn. However, unlike In or Ga, Sn does not react with NH 3 to give Sn 3 N 4 since as already explained above Sn 3 N 4 NWs were obtained only via the reaction of Sn with HCl and the formation of halides such as SnCl 2 and SnCl 4 which react readily with NH 3 [18,19].…”
Section: Resultsmentioning
confidence: 91%
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“…ZnO [4] and SnO 2 NWs [5]. More specifically, Sn 3 N 4 NWs [6,7] with diameters of 100 nm and lengths of 1 to 2 μm were only obtained recently by halide chemical vapour deposition. On the other hand Zn 3 N 2 NWs have been grown by Zong et al [8] via the direct reaction of Zn with 250 sccms of NH 3 at 600°C.…”
Section: Introductionmentioning
confidence: 99%