Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE

Bohnen, T.; Ashraf, H.; Dreumel, G.W.G. van; Verhagen, Sjoerd; Weyher, J.L.; Hageman, P.R.; Vlieg, Elias

doi:10.1016/j.jcrysgro.2010.04.010

Cited by 8 publications

(7 citation statements)

References 26 publications

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“…Although HF-VPE has some limitations, such as low grow rate and high Ga source temperature, in the 2000s several groups tried to use the HF-VPE process to grow GaN [30,31] . Nakamura et al [32][33][34][35] recently proposed a new HF-VPE design, as shown in Fig.…”

Section: Halogen-free Vpementioning

confidence: 99%

Hydride vapor phase epitaxy for gallium nitride substrate

Wei

Yang

et al. 2019

J. Semicond.

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Due to the remarkable growth rate compared to another growth methods for gallium nitride (GaN) growth, hydride vapor phase epitaxy (HVPE) is now the only method for mass product GaN substrates. In this review, commercial HVPE systems and the GaN crystals grown by them are demonstrated. This article also illustrates some innovative attempts to develop homebuilt HVPE systems. Finally, the prospects for the further development of HVPE for GaN crystal growth in the future are also discussed.

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Section: Halogen-free Vpementioning

confidence: 99%

Hydride vapor phase epitaxy for gallium nitride substrate

Wei

Yang

et al. 2019

J. Semicond.

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“…Because the pre-reaction between Ga metal and HCl is widely agreed as a nearly complete reaction through both experiment and calculation, 30,36,37) GaCl was input directly as III source in this simulation model. The chemical reactions in vapor phase were ignored.…”

Section: Chemical Modelmentioning

confidence: 99%

“…These particles may finally lead to small pits on the GaN layer surface as reported in Ref. 30. We designed the inverted wafer configuration to conquer this problem.…”

Section: Introductionmentioning

confidence: 96%

Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth

Liu

Fujimoto

Nitta

et al. 2019

Jpn. J. Appl. Phys.

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In order to make low cost bulk GaN single crystal with a high growth rate, we have built a vertical HVPE reactor with a showerhead configuration. The flow from the showerhead of the reactor is independently controlled by inner/outer two sets of gas supply lines. This special showerhead design makes the flow model different from the conventional showerhead reactors. We have employed a finite element-based simulator to study the fluid dynamic and crystal growth of this inner/outer flow independently controlled showerhead. Two simulation experiments were performed. One experiment has demonstrated that both growth rate and Ga yield can be improved without compromising the uniformity by controlling the different input parameters of inner and outer flow on the showerhead, as compared with the conventional showerhead. The other experiment has demonstrated that the showerhead can be further optimized by changing the inner/outer area ratio and input parameters.

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“…The issue of the high growth rate, low parasitic deposition, and preparation of the 2 in crack-free GaN layers in the Cl 2 based process has been discussed in Ref. [12].…”

Section: Growth Ratementioning

confidence: 99%