Enhanced humidity resistance of porous SiNWs via OTS functionalization for rarefied NO2 detection

Qin, Yuxiang; Jiang, Yunqing; Zhao, Liming

doi:10.1016/j.snb.2018.12.013

Cited by 18 publications

(12 citation statements)

References 56 publications

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“…The electrical readout can be done by applying a DC or AC voltage to the electrical contacts (electrodes/metallization) and monitoring the current passing through SiNWs, or by direct measurement of the resistance by a sensitive ohmmeter. As described above the adsorption of the gas molecules onto the nanowires surface changes the conductance of the sensing structure, which changes the current or resistance output [115][116][117]. Gas concentration is indicated here by the amount of change in sensor resistance or current flow upon exposure to the gas molecules.…”

Section: Resistors and Field Effect Transistors For Gas Sensingmentioning

confidence: 99%

“…For example, Qin et al reported the functionalization of SiNWs by octadecyltrichlorosilane (OTS) to enhance the humidity resistance during NO 2 sensing [116]. In this case, the SiNWs arrays prepared by MACE were conjugated by OTS from 1 vol% toluene suspension at RT.…”

Section: Chemical Surface Modificationmentioning

confidence: 99%

“…Presented limit of the detection of that structure is of 5 ppb and 50 ppb for RH 55% and 75%, respectively. [116], with permission from Elsevier, 2020.…”

Section: Chemical Surface Modificationmentioning

confidence: 99%

“…(e) response value versus relative humidity and corresponding cubic fits (red line) for SiNWs sensor, (f) OTS/SiNWs sensor towards 50 ppb NO 2 , and (g) dynamic response of OTS/SiNWs sensor to varying concentration of NO 2 at 75% RH. Reproduced from[116], with permission from Elsevier, 2020.…”

mentioning

confidence: 99%

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Silicon Nanowires for Gas Sensing: A Review

et al. 2020

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The unique electronic properties of semiconductor nanowires, in particular silicon nanowires (SiNWs), are attractive for the label-free, real-time, and sensitive detection of various gases. Therefore, over the past two decades, extensive efforts have been made to study the gas sensing function of NWs. This review article presents the recent developments related to the applications of SiNWs for gas sensing. The content begins with the two basic synthesis approaches (top-down and bottom-up) whereby the advantages and disadvantages of each approach have been discussed. Afterwards, the basic sensing mechanism of SiNWs for both resistor and field effect transistor designs have been briefly described whereby the sensitivity and selectivity to gases after different functionalization methods have been further presented. In the final words, the challenges and future opportunities of SiNWs for gas sensing have been discussed.

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Section: Resistors and Field Effect Transistors For Gas Sensingmentioning

confidence: 99%

Section: Chemical Surface Modificationmentioning

confidence: 99%

“…Presented limit of the detection of that structure is of 5 ppb and 50 ppb for RH 55% and 75%, respectively. [116], with permission from Elsevier, 2020.…”

Section: Chemical Surface Modificationmentioning

confidence: 99%

mentioning

confidence: 99%

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Silicon Nanowires for Gas Sensing: A Review

et al. 2020

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“…Recently, in 2019, Yuxiang Qin et al 60 reported an octadecyltrichlorosilane (OTS)-functionalized porous silicon nanowires (SiNWs)-based resistive sensor for detection of NO 2 gas. The conjugation of OTS with SiNWs was performed by treating the nanowire samples with 1 vol% OTS in toluene for 1 min at room temperature.…”

Section: Self-assembled Monolayers In Chemical Sensorsmentioning

confidence: 99%