Enhanced initial photocurrent caused by the multiplication process at punch-through voltage in InGaAs/InP avalanche photodiode with highly doped charge layer

Liu, Wei; Shi, Zhenghai; Gao, Junhua

doi:10.1016/j.infrared.2022.104218

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Cited by 3 publications

(1 citation statement)

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“…Near-infrared InGaAs/InP avalanche photodiodes (APDs) are key devices in the fields of communication, lidar and others [1][2][3][4] . The structure with separated absorption, grade, charge and multiplication (SAGCM) and using InGaAs/InP APD epitaxial material, which can be mass-produced by metalorganic chemical vapor deposition (MOCVD), has been widely applied.…”

Section: Introductionmentioning

confidence: 99%

Surface plasmon enhanced InGaAs/InP APD based on mass-produced epitaxial materials

Chen¹,

Xie²,

Xie³

et al. 2023

International Conference on Optoelectronic Information and Functional Materials (OIFM 2023)

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Section: Introductionmentioning

confidence: 99%

Surface plasmon enhanced InGaAs/InP APD based on mass-produced epitaxial materials

Chen¹,

Xie²,

Xie³

et al. 2023

International Conference on Optoelectronic Information and Functional Materials (OIFM 2023)

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Theoretical Study of Enhancing the Performance of InP/InGaAs Avalanche Photodiodes with p‐Type‐Doped InP Interposed Layer

Lin,

Zhao,

Zhou

et al. 2024

Physica Rapid Research Ltrs

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For InP/InGaAs avalanche photodiodes (APD), there are three important performance parameters: mean gain, excess noise factor, and dark current. Reducing excess noise and dark current is an effective way to achieve higher sensitivity and improve the performance of an APD. In this article, an interposed layer is introduced into the InP/InGaAs avalanche photodiode structure. The results considering dead space indicate that the thin interposed layer structure has lower excess noise factor and dark current at the same mean gain compared with conventional APD structure, which is reduced by ≈34% and 11%, respectively, at mean gain . This provides a feasible idea for the construction of high‐performance APD.

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倍增区凹槽环深度对键合无电荷层InGaAs/Si APD性能的影响

Zhang Juan,

Long Jingjing,

Ke Shaoying

2024

Laser Optoelectron. Prog.

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Enhanced initial photocurrent caused by the multiplication process at punch-through voltage in InGaAs/InP avalanche photodiode with highly doped charge layer

Cited by 3 publications

References 30 publications

Surface plasmon enhanced InGaAs/InP APD based on mass-produced epitaxial materials

Surface plasmon enhanced InGaAs/InP APD based on mass-produced epitaxial materials

Theoretical Study of Enhancing the Performance of InP/InGaAs Avalanche Photodiodes with p‐Type‐Doped InP Interposed Layer

倍增区凹槽环深度对键合无电荷层InGaAs/Si APD性能的影响

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