Enhanced interface mixing of Fe∕Si bilayers on preamorphized silicon substrates

Abstract

Ion-beam mixing of Fe∕Si bilayers, induced at room temperature by 100keV Ar+40, 180keV Kr+86, and 250keV Xe+132 ions, was investigated. The study focuses on the influence of the preamorphization of the Si(100) substrates by 1.0keV Ar-ion irradiation. Rutherford backscattering spectroscopy as well as scanning and transmission electron microscopies were applied for structural characterization. The mixing rate across the preamorphized Fe∕Si interface was, on average, by 76% higher than that of crystalline Si.

Optical properties of low-energy Ag ion implanted monocrystalline silicon

“…Jedna od najpogodnijih metoda za sintezu nanočestica i nanoklastera u površinskoj oblasti supstrata je nisko-energetska jonska implantacija [14][15]. Ova tehnika omogućava kontrolu nad dubinom i koncentracijom implantiranih jona u datoj matrici.…”

Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy

“…1(b) the change of the interface variance, Dr 2 , is plotted versus U, the slope of which corresponds to the mixing rate of Dr 2 /U = 1.6(3) nm 4 . For a definition of these quantities see [11]. Similar athermal mixing rates of Dr 2 /U = 1.0-1.5 nm 4 have been measured for 100 keV Ar ions impinging on Co/c-Si and Fe/c-Si bilayer samples [18].…”

“…Nonetheless, the correlations existing between the microstructural properties of ion-irradiated or ionmixed metal/silicon bilayers and their magnetic properties (in the case of 3d elements) is far from being understood. Moreover, recent mixing experiments in the Fe/Si system have given evidence that the structure of the interface and crystallinity of the Si substrate strongly influence the mixing rate [11,12]. Phase transformations in Xe-irradiated Co and Co/Fe films have recently been studied by Zhang and collaborators [13,14].…”

Ion beam induced mixing of co-sputtered Au–Ni films analyzed by Rutherford backscattering spectrometry

“…Energetic ion beams, when penetrate through the interface of different materials, produce massive atomic transport across the interface which results in many stable, unstable or even thermodynamically non-equilibrium phase formation around the interface. Due to improved electrical and chemical properties of the ion irradiated materials, mixing of metal-metal or metalsemiconductor systems using ion beam is frequently used to tailor different suitable contact materials for electronic devices [4,5]. Ion bombardment induced composite formation in Au-Ni bilayer or multiplayer films deposited on Si [6,7] or III-V nitride semiconductors [8] have been proved to be an effective method to fabricate contacts having low resistivity (typically, $ 6 Â 10 À4 V cm [9]).…”