Nuclear Instruments and Methods in Physics Research Section B:
2008
DOI: 10.1016/j.nimb.2008.03.033
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Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy

N. Bibić
1
,
Klaus‐Peter Lieb
2
,
V. Milinović
3
et al.
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Cited by 4 publications
(1 citation statement)
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“…Kumar sa saradnicima [41] Grupa naučnika iz Göttingen-a je, zajedno sa saradnicima iz Beograda, izvela niz eksperimenata na Co/Si, Fe/Si, Ta/Si i Ni/Si sistemima, koristeći različite energije i vrste upadnih jona [46][47][48][49][50]. Debljina sloja koji nastaje procesom atomskog miješanja raste linearno sa dozom i karakteristična je za sve navedene sisteme.…”
Section: Uvodunclassified

Nanostructural characterization of CrN and CO thin films on silicon substrate, modified by ion bombardment

Novaković1
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0
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“…Kumar sa saradnicima [41] Grupa naučnika iz Göttingen-a je, zajedno sa saradnicima iz Beograda, izvela niz eksperimenata na Co/Si, Fe/Si, Ta/Si i Ni/Si sistemima, koristeći različite energije i vrste upadnih jona [46][47][48][49][50]. Debljina sloja koji nastaje procesom atomskog miješanja raste linearno sa dozom i karakteristična je za sve navedene sisteme.…”
Section: Uvodunclassified

Nanostructural characterization of CrN and CO thin films on silicon substrate, modified by ion bombardment

Novaković1
0
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0
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Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing

Novaković
1
,
Popović
2
,
Zhang
3
et al. 2014
Applied Surface Science
7
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Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay

Novaković
1
,
Zhang
2
,
Popović
3
et al. 2011
Nuclear Instruments and Methods in Physics Research Section B:
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