Enhanced leakage and ferroelectric properties of Zn-doped BiFeO3 thin films grown by sol-gel method

Yang, Shiju; Zhang, Fengqing; Xie, Xiaobin; Sun, Huajun; Zhang, Liping; Fan, Suhua

doi:10.1016/j.jallcom.2017.11.014

Cited by 59 publications

(19 citation statements)

References 34 publications

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“…Numbers techniques have been developed to fabricate BFO thin film in past years, such as pulsed laser deposition (PLD), [ 2,29,36 ] radio‐frequency (RF) magnetron sputtering, [ 4,37,38 ] molecular beam epitaxy (MBE), [ 39,40 ] and metalorganic chemical vapor deposition (MOCVD), [ 41,42 ] as well as sol–gel/chemical‐solution deposition (CSD). [ 3,43,44 ] As shown in Table 1 , [ 2,4,24,29,30,36,38,41,43–61 ] which lists the reported BFO films with their observed polarization ( P )–electric field ( E ) loops, it has been demonstrated that the physical‐based processing, such as PLD or RF, can deposit relatively dense BFO thin films, that show lower leakage and defects. As a result, these BFO thin films show a thinner film thickness and lower coercive field.…”

Section: Current Research Status Of Csd Derived Bfo Filmsmentioning

confidence: 99%

“…Second, these CSD derived BFO thin films usually show unsaturated or leaky P – E loops at room temperature, the ferroelectric properties of those BFO films are very diverse, and even the CSD processing parameters are similar. [ 54–56,58 ] In addition, 2‐methoxyethanal as a solvent is commonly employed to deposit BFO thin films in CSD processing, which is harmful to human health and the environment. Last, the prepared BFO thin films by CSD are usually randomly oriented since nucleation easily occurs within the whole bulk thin films, and few reports about CSD epitaxial BFO thin films, especially films on specific oxide electrodes, exist.…”

Section: Current Research Status Of Csd Derived Bfo Filmsmentioning

confidence: 99%

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Chemical Solution Route for High‐Quality Multiferroic BiFeO₃ Thin Films

Yang

Jin

Wei

et al. 2019

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Bismuth ferrite (BiFeO3) has recently become interesting as a room‐temperature multiferroic material, and a variety of prototype devices have been designed based on its thin films. A low‐cost and simple processing technique for large‐area and high‐quality BiFeO3 thin films that is compatible with current semiconductor technologies is therefore urgently needed. Development of BiFeO3 thin films is summarized with a specific focus on the chemical solution route. By a systematic analysis of the recent progress in chemical‐route‐derived BiFeO3 thin films, the challenges of these films are highlighted. An all‐solution chemical‐solution deposition (AS‐CSD) for BiFeO3 thin films with different orientation epitaxial on various oxide bottom electrodes is introduced and a comprehensive study of the growth, structure, and ferroelectric properties of these films is provided. A facile low‐cost route to prepare large‐area high‐quality epitaxial BFO thin films with a comprehensive understanding of the film thickness, stoichiometry, crystal orientation, ferroelectric properties, and bottom electrode effects on evolutions of microstructures is provided. This work paves the way for the fabrication of devices based on BiFeO3 thin films.

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Section: Current Research Status Of Csd Derived Bfo Filmsmentioning

confidence: 99%

Section: Current Research Status Of Csd Derived Bfo Filmsmentioning

confidence: 99%

Chemical Solution Route for High‐Quality Multiferroic BiFeO₃ Thin Films

Yang

Jin

Wei

et al. 2019

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“…Among various multiferroics, BiFeO 3 (BFO) is the most concerning multiferroic materials, owing to its highly G-type anti-ferromagnetic Néel temperature (T N ~ 640 K), highest ferroelectric Curie temperature (T C ~ 1103 K) [4], and large saturated polarization value (P S ~ 100 μC/cm 2 ) [5]. The high saturated polarization value comes from the stereochemical activity of Bi 6s 2 lone pair electrons hybridizing with the empty 6p 0 orbitals of Bi 3+ and 2p 6 elections of O 2ion [6].…”

Section: Introductionmentioning

confidence: 99%

“…The high saturated polarization value comes from the stereochemical activity of Bi 6s 2 lone pair electrons hybridizing with the empty 6p 0 orbitals of Bi 3+ and 2p 6 elections of O 2ion [6]. BiFeO 3 contains a G-type of antiferromagnetic ordering with a cycloidal modulation of 64 nm along the [110] direction, results in the concentration of macroscopic magnetization [2,4]. Recently, Wang et al [7] prepared BiFeO 3 -based leadfree ceramics with a high recoverable energy density (W rec ∼ 2.1 J/cm 3 ).…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Al2O3-coated BiFeO3 particles and fine-grained ceramics with improved electric properties

Bai

Wang

et al. 2020

J Mater Sci: Mater Electron

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(1-x)BiFeO3@xAl2O3 ceramics with x = 0, 2.5, 5, and 7.5 mol% were prepared via the Stöber coating method. The effects of Al2O3 coating on microstructure, dielectric, and ferroelectric properties had been investigated. At x = 5 and 7.5, the samples had a great Al2O3 coating effect. XRD results indicated that excessive Al2O3 coating increased the formation of secondary phases (Bi2Fe4O9 and Bi24A12O39). After the coating of Al2O3, the samples had higher relative density and decreased loss tangent. Compared with the pure BiFeO3 sample, the Al2O3-coated samples had improved Bi-O strength, less oxygen vacancy, and the reduction of Fe3+ was decreased. The leakage current density decreased gradually. At x = 5, the sample had the highest Pr value (1.53 μC/cm2). These electric properties changes were ascribed to the generation of secondary phases, the ne grains, and the fewer vacancies.

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“…However, BFO has remained unsuitable, due to its high leakage current and large dielectric loss [4][5][6]. Magnetic properties can be adjusted by using Nd 3+ ions instead of larger Bi 3+ ions in the BFO composition [7], and in order to improve leakage current, Ni, Ti, Sm, Mn, Zn, and Ho doped in BFO thin films [8][9][10][11][12][13][14], to improve ferroelectric properties and ferroelectric properties, but there was limited action in reducing leakage current. Due to its nonlinear dielectric properties, (Ba,Sr)TiO 3 has been widely used in electronic devices [15][16][17]; however, there is low remnant polarization and coercive electric field in the (Ba,Sr)TiO 3 thin film.…”

Section: Introductionmentioning

confidence: 99%

Low Dielectric Loss and Multiferroic Properties in Ferroelectric/Mutiferroic/Ferroelectric Sandwich Structured Thin Films

2019

Coatings

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Bismuth ferrite (BiFeO 3 ) has proven to be promising for a wide variety of microelectric and magnetoelectric devices applications. In this work, a dense (Ba 0.65 Sr 0.35 )TiO 3 (BST)/ (Bi 0.875 Nd 0.125 )FeO 3 (BNF)/BST trilayered thin film grown on Pt-coated Si (100) substrates was developed by the rf-sputtering. For comparison, single-layered BNF and BST were also prepared on the same substrates, respectively. The results show that the dielectric loses suppression in BST/BNF/BST trilayered thin films at room temperature but has enhanced ferromagnetic and ferroelectric properties. The remnant polarization (P r ) and coercive electronic field (E c ) were 5.51 µC/cm 2 and 18.3 kV/cm, and the remnant magnetization (M r ) and coercive magnetic field (H c ) were 10.1 emu/cm 3 and 351 Oe, respectively, for the trilayered film. We considered that the bismuth's volatilization was limited by BST bottom layers making the Bi/Fe in good station, and the action of BST layer in the charge transfer between BNF thin film and electrode led to the quite low leakage current and enhanced multiferroic property. The origin of the mechanism of the highly enhanced dielectric constant and decreased loss tanδ was discussed.Coatings 2019, 9, 502 2 of 8 fields [21,22]. The electric field control of magnetism requires deterministic control of the magnetic order, and the magnetoelectric coupling in multiferrous BiFeO 3 can be understood [23]. In addition, the others FE/MF heterostructured thin films and FE/MF(FE)/FE trilayered structural thin films were prepared [24][25][26][27], but these films still have a high leakage current density and a dissipation factor.In this work, Ba 0.65 Sr 0.35 TiO 3 , Bi 0.875 Nd 0.125 FeO 3 and Ba 0.65 Sr 0.35 TiO 3 -Bi 0.875 Nd 0.125 FeO 3 -Ba 0.65 Sr 0.35 TiO 3 thin films grown on Pt/Ti/SiO 2 /Si (100) substrates were prepared by radio frequency magnetron sputtering. The ferroelectric, ferromagnetic, and electrical properties of these film samples were investigated. The low dielectric loss, low leakage current density, and multiferroic properties enhancement mechanism of the sandwich structural thin films are also discussed.

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Enhanced leakage and ferroelectric properties of Zn-doped BiFeO3 thin films grown by sol-gel method

Cited by 59 publications

References 34 publications

Chemical Solution Route for High‐Quality Multiferroic BiFeO₃ Thin Films

Chemical Solution Route for High‐Quality Multiferroic BiFeO₃ Thin Films

Fabrication of Al2O3-coated BiFeO3 particles and fine-grained ceramics with improved electric properties

Low Dielectric Loss and Multiferroic Properties in Ferroelectric/Mutiferroic/Ferroelectric Sandwich Structured Thin Films

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Enhanced leakage and ferroelectric properties of Zn-doped BiFeO3 thin films grown by sol-gel method

Cited by 59 publications

References 34 publications

Chemical Solution Route for High‐Quality Multiferroic BiFeO3 Thin Films

Chemical Solution Route for High‐Quality Multiferroic BiFeO3 Thin Films

Fabrication of Al2O3-coated BiFeO3 particles and fine-grained ceramics with improved electric properties

Low Dielectric Loss and Multiferroic Properties in Ferroelectric/Mutiferroic/Ferroelectric Sandwich Structured Thin Films

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Product

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About

Chemical Solution Route for High‐Quality Multiferroic BiFeO₃ Thin Films

Chemical Solution Route for High‐Quality Multiferroic BiFeO₃ Thin Films