Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

Abstract

Suffering from the indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare...

Performance enhancement of a self-biased n-ZnO microwire/p-GaN heterojunction ultraviolet photodetector incorporating Ag nanowires

“…2(c), the sharp diffraction peaks show a wurtzite crystal structure without any other phases, indicating that the as-synthesized MW possesses a good crystalline quality. 26,42 Using spin-coating technology, a single ZnO:Ga MW covered by AgNWs was fabricated. The SEM image of a single AgNWs@ZnO:Ga MW illustrated in Fig.…”

“…23,24 Moreover, owning to surface plasmon resonance characteristics in UV wavelengths, a dramatic enhancement of the local electric field surrounding the plasmonic nanostructures may make a positive influence on the performances of the ZnO-based optoelectronics. [25][26][27][28] Herein, we proposed and prepared a kind of ultraviolet photodetector, which was composed of a single Ga-doped ZnO microwire (ZnO:Ga MW) and p-type GaN wafer. Using a conventional ITO electrode, the photodetector exhibited distinct photoresponses, such as response times of 47 μs/1.08 ms, a maximum responsivity of 12 mA W −1 , and a specific detectivity of 3.0 × 10 11 Jones under 370 nm at 0 V. While introducing the AgNW deposited ZnO:Ga MW (AgNWs@ZnO: Ga MW) and using the AgNW film as a top transparent electrode, the light-detecting performances of the fabricated detector were greatly enhanced, including a maximum responsivity of 137 mA W −1 and detectivity of 2.15 × 10 12 Jones under the same measurement conditions.…”

Perovskite fiber-shaped optoelectronic devices for wearable applications

“…Recently, rigid substrates with light-emitting/detecting capabilities, including ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires, 143 bilayer MoTe 2 p-n junction, 144 and SnO 2 microwire/p-GaN heterojunction, have been investigated on flat/planar substrates. However, due to the inflexible nature of these materials, most of these device structures and materials are not suitable for wearable light-emitting/detecting bifunctional fibers.…”

Broadband wavelength-selective isotype heterojunction n+-ZnO/n-Si photodetector with variable polarity

“…Interestingly, the responsivity in this case is spectrally similar to that observed in our previous work for ZnO/p-Si photodetectors. [26] In addition, we evaluated the specific detectivity (D*) of the isotype device at 0 V [46], [47] , -1 V, +1 V [48] . The detectivity values, which correspond to the maximum value of responsivity, are of the order of 10 11 -10 12 Jones (Supporting Information, Table S1), in agreement with other studies on ZnO/Si photodetectors.…”

“…The detectivity values, which correspond to the maximum value of responsivity, are of the order of 10 11 -10 12 Jones (Supporting Information, Table S1), in agreement with other studies on ZnO/Si photodetectors. [48]…”