2010
DOI: 10.1063/1.3488818
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Enhanced magnetoresistance in lateral spin-valves

Abstract: The effect of feature sizes on the characteristics of lateral spintronic devices have been investigated experimentally and theoretically. It is demonstrated that confining spin-transport in the active region of a device enhances magnitude of the spin-dependent response substantially. Numerical simulation of spin-transport corroborates the experimental observations. Device characteristics are found to be a strong function of spin-polarizer and analyzer dimensions. The response is observed to attain a peak value… Show more

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Cited by 7 publications
(7 citation statements)
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“… 1 5 This enables the creation and tailoring of a range of structures including spin light emitting diodes, 6 ferromagnetic optical isolators, 7 and spin valves. 8 …”
Section: Introductionmentioning
confidence: 99%
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“… 1 5 This enables the creation and tailoring of a range of structures including spin light emitting diodes, 6 ferromagnetic optical isolators, 7 and spin valves. 8 …”
Section: Introductionmentioning
confidence: 99%
“…1−5 This enables the creation and tailoring of a range of structures including spin light emitting diodes, 6 ferromagnetic optical isolators, 7 and spin valves. 8 MnSb is an attractive TMP for spintronic applications being both ferromagnetic with a high Curie temperature (T C = 314 °C) 9 and displaying a very large magneto-optical Kerr rotation. 10 The material is also a weak p-type metal (p ≈ 10 21 cm −3 ) which mitigates the well-known conductivity mismatch problem to semiconductors.…”
Section: ■ Introductionmentioning
confidence: 99%
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“…Therefore, the measured polarization values are a lower limit to the obtainable output polarization. 11,12 Room temperature polarization is not obtained owing to relaxation of the injected spin population over the significantly longer transport length than what can be accommodated for high temperature operation in bulk n-type GaN. 13 In summary, we have demonstrated a spin-LED using GaCrN as a spin injector.…”
mentioning
confidence: 99%
“…22 In addition, hopeful results about spin injection from MnAs into lateral spin valve geometry on GaAs(001) and InP(001) have been reported. 24,25 Here, we focus on a molecular beam epitaxial (MBE) grown MnAs/GaAs/InAs hybrid system on GaAs(111)B, which is expected as a potential candidate for future spin-FET, where GaAs is a III-V wide bandgap semiconductor against InAs and is expected to act as a tunnel barrier to improve the typical conductivity mismatched problem in FM/SC hybrid systems. 26 The central issues of this paper are to investigate spin injection and detection in the MnAs/GaAs/InAs hybrid system on GaAs(111)B through lateral spin valve geometry at varied temperatures.…”
Section: Introductionmentioning
confidence: 99%