Enhanced memory characteristics in organic ferroelectric field-effect transistors through thermal annealing

Sugano, Ryo; Tashiro, Tomoko; Sekine, Toshikazu; Fukuda, Kenjiro; Kumaki, Daisuke; Tokito, Shizuo

doi:10.1063/1.4935342

Cited by 4 publications

(4 citation statements)

References 30 publications

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“…Next, a solution of P(VDF‐TrFE) was spun onto the substrate to form the ferroelectric layer (200 nm in thickness). Subsequently, the film of the P(VDF‐TrFE) was annealed at 135 °C for 1 h in ambient air in order to increase its crystallinity . Next, DNTT was deposited onto the ferroelectric layer by thermal deposition (75 nm in thickness).…”

Section: Methodsmentioning

confidence: 99%

Switching Time in Ferroelectric Organic Field‐Effect Transistors

Sugano

Tashiro

Sekine

et al. 2018

Physica Status Solidi (a)

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Ferroelectric organic field‐effect transistors (Fe‐OFETs) are considered a promising technology to develop flexible and low‐cost nonvolatile memories. Although their switching time between program‐state and erase‐state forms an important aspect of their functionality, it is still unclear as to what parameters dominate the switching time. Two possible parameters that influence the switching time are the channel formation of the semiconductor layer and the ferroelectric polarization in the ferroelectric layer. In this study, the origin of the switching time of the Fe‐OFETs is experimentally clarified. The switching times of Fe‐OFETs and ferroelectric capacitors are independently measured. Programming time of the Fe‐OFETs is limited by the above two times as expected; however, the ferroelectric polarization is not negligible and limited the time in most of cases. Additionally, it is found that switching time from depolarized erase‐state to polarized program‐state in the Fe‐OFETs is comparable to the ferroelectric polarization time in the ferroelectric capacitor. On the other hand, erasing time of the Fe‐OFETs is much slower than their programing time due to the depletion layer in the semiconductor layer. The erasing time can be predicted by taking a series capacitance made by depleted semiconductor layer into consideration.

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Section: Methodsmentioning

confidence: 99%

Switching Time in Ferroelectric Organic Field‐Effect Transistors

Sugano

Tashiro

Sekine

et al. 2018

Physica Status Solidi (a)

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“…Data computation has become increasingly essential in the modern world and is the backbone of various technologies such as the internet of things (IoT), big data, artificial intelligence materials in the FeFET architecture. [14][15][16] Among them, AOS has attracted special attention as an active channel layer material due to various advantages such as its remarkable electrical properties, high transparency, and decent stability. [17] Lee et al reported amorphous silicon-zinc-tin-oxide (a-SZTO) as an AOS thin-film transistor with better electrical performance and good stability.…”

Section: Introductionmentioning

confidence: 99%

Phase‐Controlled Artificial SiZnSnO/P(VDF‐TrFE) Synaptic Devices with a High Dynamic Range for Neuromorphic Computing

Lee

Kumar

et al. 2022

Adv Elect Materials

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Artificial synapses, such as ferroelectric field‐effect transistors, aspire the brain‐like computation in real life and are likely to replace conventional computing methods in the future. Amorphous SiZnSnO (a‐SZTO)‐based ferroelectric field‐effect transistor is fabricated using the organic poly(vinylidene fluoride‐trifluoroethylene) P(VDF‐TrFE) ferroelectric gate insulating layer. First, the ferroelectric properties of P(VDF‐TrFE) are analyzed depending on the crystallization temperature for artificial synaptic transistor applications. The ferroelectricity becomes prominent with the evolution of the β‐phase till 140 °C and degrades thereafter. The a‐SZTO‐based ferroelectric field‐effect transistors employing P(VDF‐TrFE) show anticlockwise hysteresis, typical for a ferroelectric field‐effect transistor. The nonlinearity for the potentiation and depression and the dynamic range is confirmed to be increased with higher β‐phase concentration. The rise in the concentration is related to the elevated thermodynamic stability of the β‐phase between curie temperature and the melting point. Utilizing the parameters obtained from the a‐SZTO‐P(VDF‐TrFE) synaptic transistor, the simulation studies exhibit a high recognition rate of 86.8%, which makes it a promising candidate for artificial intelligence applications.

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“…P(VDF-TrFE) has been applied to several devices such as pressure sensors, memories, and actuators. [15][16][17][18][19][20] In particular, printed pressure sensors based on the P(VDF-TrFE) can be expected to be applied to health-care devices because of their high sensitivity to pressure. 21) Moreover, P(VDF-TrFE) is compatible with the printing process because of its solubility in several organic solvents.…”

Section: Introductionmentioning

confidence: 99%

Fully printed and flexible ferroelectric capacitors based on a ferroelectric polymer for pressure detection

Sekine

Sugano

Tashiro

et al. 2016

Jpn. J. Appl. Phys.

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We report on the fabrication and demonstration of fully printed ferroelectric capacitors using poly(vinylidene fluoridetrifluoroethylene) [P(VDF–TrFE)]. The printed ferroelectric capacitors were primarily fabricated by ink-jet printing on a thin plastic film substrate. The annealing process for the P(VDF–TrFE) layer was optimized from the viewpoints of surface morphology and crystallinity. A good ferroelectric polarization–electric field loop and piezoelectricity in the P(VDF–TrFE) were achieved for the printed ferroelectric capacitors. We have succeeded in the detection of a weak pressure of 150 mbar using the printed ferroelectric capacitor, which is an indication of a potential application to health-care biosensors. These results were realized by the optimization of the annealing temperature for the P(VDF–TrFE) layer.

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Enhanced memory characteristics in organic ferroelectric field-effect transistors through thermal annealing

Cited by 4 publications

References 30 publications

Switching Time in Ferroelectric Organic Field‐Effect Transistors

Switching Time in Ferroelectric Organic Field‐Effect Transistors

Phase‐Controlled Artificial SiZnSnO/P(VDF‐TrFE) Synaptic Devices with a High Dynamic Range for Neuromorphic Computing

Fully printed and flexible ferroelectric capacitors based on a ferroelectric polymer for pressure detection

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