Enhanced Metal–Insulator Transition Performance in Scalable Vanadium Dioxide Thin Films Prepared Using a Moisture-Assisted Chemical Solution Approach

Liang, Weizheng; Gao, Min; Lü, Chang; Zhang, Zhi; Chan, Cheuk Ho; Zhuge, Lanjian; Dai, Jiyan; Yang, Hao; Chen, Chonglin; Park, Bae Ho; Jia, Quanxi; Lin, Yuan

doi:10.1021/acsami.7b18533

Cited by 36 publications

(37 citation statements)

References 47 publications

(107 reference statements)

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“…However, the sol-gel method (or chemical solution) can conveniently modulate the oxygen stoichiometry in vanadium oxide. In previous work, a VO 2 thin film with enhanced MIT properties was synthesized by using a moisture-assisted chemical solution method [112]. In order to obtain high performance VO 2 films, it is very important to prevent the formation of V 5+ or V 3+ during the growth process.…”

Section: Sol-gel Methodsmentioning

confidence: 99%

Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives

et al. 2021

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Vanadium dioxide (VO2) is a typical metal-insulator transition (MIT) material, which changes from room-temperature monoclinic insulating phase to high-temperature rutile metallic phase. The phase transition of VO2 is accompanied by sudden changes in conductance and optical transmittance. Due to the excellent phase transition characteristics of VO2, it has been widely studied in the applications of electric and optical devices, smart windows, sensors, actuators, etc. In this review, we provide a summary about several phases of VO2 and their corresponding structural features, the typical fabrication methods of VO2 nanostructures (e.g., thin film and low-dimensional structures (LDSs)) and the properties and related applications of VO2. In addition, the challenges and opportunities for VO2 in future studies and applications are also discussed.

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Section: Sol-gel Methodsmentioning

confidence: 99%

Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives

et al. 2021

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“…The detailed growth process has been reported in our previous work. [39] The pure VO 2 films deposited on Al 2 O 3 substrates have a thickness of about 120 nm. The schematic diagram of the composite film is shown in figure 1(a).…”

Section: Eeperimentsmentioning

confidence: 99%

“…VO 2 films can be patterned by standard photolithography and wet etching technique, but these methods are complex. In this paper, VO 2 films were deposited on sub-wavelength metallic grating structures by the polymer assisted deposition (PAD) method [37][38][39][40]. The atomic force microscopy images revealed that the thickness of VO 2 films formed periodic height fluctuations and the fluctuation height increased with the increase of grating period.…”

Section: Introductionmentioning

confidence: 99%

Terahertz transmission properties of vanadium dioxide films deposited on gold grating structure with different periods

Gao

Luo

et al. 2020

Mater. Res. Express

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Vanadium dioxide (VO 2 ) is a typical thermal induced phase transition material, exhibiting a transition from metallic phase at high temperature to insulating phase at low temperature, which is also accompanied by a conductivity change of over several orders of magnitude. The transition property makes VO 2 prominent to achieve an effective degree of control of terahertz (THz) wave. In this paper, composite films consisting of metal grating with different periods and VO 2 film were prepared by polymer assisted deposition method. Although the conductivity change of VO 2 films deposited on gold grating structure across phase transition was declined to about two orders of magnitude, the amplitude modulation depth of THz of the composite films can still reach a high value. Furthermore, it was found that the THz modulation depth was related with the grating period. According to theoretical simulation, the fluctuation height of VO 2 films, caused by metal grating structure during growth, can be used to regulate THz wave. These results demonstrate an economic and unsophisticated method to fabricate VO 2 films with thickness fluctuation structure and then tune the THz waves.

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“…When a mica substrate is thinned down to about few micrometers, the VO 2 /mica film becomes flexible, as shown in Figure S1 in the Supporting Information. The A g and B g vibration modes in the Raman spectrum (Figure S2, Supporting Information) reveal that the VO 2 film is an insulating monoclinic phase with space group P 2 1 / c (the M1 phase) at 298 K . Figure S3 in the Supporting Information shows the X‐ray diffraction (XRD) θ − 2θ scan of the VO 2 /mica film, and only the VO 2 (020) and (040) peaks, along with the mica (00 n ) ( n = 1, 2, 3, ..., 8) peaks are observed, indicating that the VO 2 film is of high purity and without other orientations.…”

Section: Compilation Of Optical Trigger Threshold Fth and Thz Field Mmentioning

confidence: 99%

Van der Waals Heteroepitaxial VO₂/Mica Films with Extremely Low Optical Trigger Threshold and Large THz Field Modulation Depth

Liang

Jiang

Guo

et al. 2019

Advanced Optical Materials

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More interestingly, the phase transition of VO 2 can be triggered by thermal, [7,8] electrical, [9,10] and optical stimuli [11][12][13][14][15][16] as well as strain, [17,18] making it very appealing to practical applications. Across the MIT, VO 2 changes from a monoclinic phase into a rutile phase. The insulating monoclinic phase has high THz transparency due to its low-density free carrier absorption, while the metallic rutile phase is opaque in the THz regime due to its high free carrier concentration (>10 21 cm −3 ). [19] The huge change of free carrier concentration across MIT gives rise to VO 2 's large M d in the THz regime; this characteristic is significant since there are very few natural materials with suitable optical properties for THz wave manipulation.For VO 2 -based THz switches and modulators, a very high laser intensity is normally required to trigger MIT. Émond et al. [12] reported a pump laser fluence of F th = 3.8 mJ cm −2 in order to trigger MIT of VO 2 /Al 2 O (11 3 02) films, while Cocker et al. [13] reported F th = 2 mJ cm −2 for VO 2 /Al 2 O (112 3 0) films. Hilton et al. [14] reported F th = 7 mJ cm −2 for a VO 2 /MgO(100) film, while Xiao et al. [15] reported the same value for VO 2 /SiO 2 films. The high F th values of VO 2 films are attributed to the facts that photoinduced heat accumulation or high concentration of photoinduced carriers are needed to trigger the MIT.The high optical trigger threshold F th of VO 2 films significantly increases the cost of VO 2 -based THz devices, so it is highly desirable to explore means to reduce F th of VO 2 films for applications to THz (opto)electronics. One way is to heat VO 2 films close to the phase transition temperature, T c . Cocker et al. [13] obtained a temperature-dependent phase diagram of ultrafast photoinduced MIT of VO 2 , and found that F th of VO 2 films decreases from 8 to 2 mJ cm −2 when the sample is heated from 41.2 to 295 K. However, relatively high F th is still needed to drive the MIT even at high temperatures. Pashkin et al. [16] reported a reduction in F th from 4.6 to 3.5 mJ cm −2 when a VO 2 /diamond film was heated from 295 to 320 K. Heating a VO 2 film to T c does reduce F th , but the effect is insignificant.Another approach to reduce F th is doping, which tunes T c closer to room temperature but also increases photoinduced carriers at a certain pump fluence. W is the most used element for VO 2 doping, highly effective in reducing T c and increasing Materials with low optical trigger threshold and large THz field modulation depth are highly desirable for THz switches and modulators. VO 2 , a classical strongly correlated oxide undergoing a sharp metal-insulator transition (MIT), is advantageous for its large THz field modulation depth by virtue of MIT. However, for optically triggered VO 2 -based THz switches and modulators, high pump laser intensity is normally required to trigger the MIT, adding considerable costs to THz systems. Reducing optical trigger threshold of VO 2 is of substantial interest in the THz scien...

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Enhanced Metal–Insulator Transition Performance in Scalable Vanadium Dioxide Thin Films Prepared Using a Moisture-Assisted Chemical Solution Approach

Cited by 36 publications

References 47 publications

Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives

Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives

Terahertz transmission properties of vanadium dioxide films deposited on gold grating structure with different periods

Van der Waals Heteroepitaxial VO₂/Mica Films with Extremely Low Optical Trigger Threshold and Large THz Field Modulation Depth

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Enhanced Metal–Insulator Transition Performance in Scalable Vanadium Dioxide Thin Films Prepared Using a Moisture-Assisted Chemical Solution Approach

Cited by 36 publications

References 47 publications

Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives

Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives

Terahertz transmission properties of vanadium dioxide films deposited on gold grating structure with different periods

Van der Waals Heteroepitaxial VO2/Mica Films with Extremely Low Optical Trigger Threshold and Large THz Field Modulation Depth

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Van der Waals Heteroepitaxial VO₂/Mica Films with Extremely Low Optical Trigger Threshold and Large THz Field Modulation Depth