highly attractive for applications in the field of (opto-)electronics-mostly due to the feasible processing from solution and the tunability of their bandgap energy. Lead sulphide (PbS), in particular, attracts considerable interest due to its narrow bulk bandgap of 0.41 eV and the subsequent possibility to harness infrared photons in detectors and solar cells [1][2][3][4] or emit infrared light. [5][6][7] As-synthesized CQDs are commonly covered with long, electrically insulating surface ligands that need to be exchanged in order to promote electrical conduction. This exchange improves the charge carrier mobility, but can simultaneously affect the quantum dot (QD) density of states (DOS) and may introduce in-gap states (IGS). [8] In most cases, IGS are considered as trap states. The high surface to volume ratio renders the CQDs vulnerable to surface-related defects, which might be caused by incomplete surface passivation, surface oxidation, or interfacial states caused by the attachment of exchanged ligands. Such defect states were observed for PbS before by various techniques. Reported were especially a state 0.2 eV above the valence level of 1,2-ethanedithiol or 1,3-mercaptopropionic acid (EDT, MPA) capped CQDs via Kelvin probe force microscopy (KPFM) and scanning tunneling spectroscopy (STS), [9][10][11][12] Additionally, a quasimetallic midgap band ≈0.4 eV below the conduction