High-quality ultrathin single-crystalline SnSe2 flakes are synthesized under atmospheric-pressure chemical vapor deposition for the first time. A high-performance photodetector based on the individual SnSe2 flake demonstrates a high photoresponsivity of 1.1 × 10(3) A W(-1), a high EQE of 2.61 × 10(5)%, and superb detectivity of 1.01 × 10(10) Jones, combined with fast rise and decay times of 14.5 and 8.1 ms, respectively.

Three isomorphous compounds M(CHOO)3[NH2(CH3)2] (M = Mn(1 x Mn), Co(2 x Co), Ni(3 x Ni)) have been synthesized in solvothermal conditions. Single-crystal X-ray diffraction shows that they are all crystallized in the trigonal space group R c with small differences in the lattice parameters. Bridged by the three-atom single-bridge CHOO-, M ions form a three-dimensional distorted perovskite-like structure with dimethylamine (DMA) cations located in the cages of the network. Based on the magnetic data, these three 3D compounds are weak ferromagnets with the critical temperature Tc = 8.5 K (1 x Mn), 14.9 K (2 x Co), and 35.6 K (3 x Ni), and for 2 x Co and 3 x Ni, spin reorientation might take place at 13.1 and 14.3 K, respectively. At 1.8 K, hysteresis loops can be observed for all three compounds with the coercivity field ca. 90 Oe (1 x Mn), 920 Oe (2 x Co), and 320 Oe (3 x Ni). The canting angles are estimated to be 0.08 degrees, 0.5 degrees, and 0.6 degrees for 1 x Mn, 2 x Co, and 3.Ni, respectively. The magnetic coupling between MnII ions in 1.Mn was estimated based on the model developed by Rushbrook and Wood for a Heisenberg antiferromagnet on a simple cubic lattice and the best fit gives J = -0.23 cm(-1). At the same time, according to molecular field theory of antiferromagnetism, the J values for compounds 1 x Mn, 2 x Co, and 3 x Ni were estimated to be -0.32 cm(-1), -2.3 cm(-1), and -4.85 cm(-1), respectively. The spin cant in these compounds may originate from the noncentrosymmetric character of the three-atom single-bridge CHOO-. Furthermore, amorphous materials 4 x Mn238, 5 x Mn450, 6 x Co320, and 7 x Ni300 were prepared from precursors 1-3 under an argon atmosphere at different temperatures according to the thermogravimetric analyses. As an interesting result, 5 x Mn450 was confirmed to be an amorphous form of Mn3O4 with a considerably large coercivity field HC = 4.1 kOe at 30 K compared to that value (250 Oe) for bulk Mn3O4.

Subcentimeter single-crystalline graphene grains, with diameter up to 5.9 mm, have been successfully synthesized by tuning the nucleation density during atmospheric pressure chemical vapor deposition. Morphology studies show the existence of a single large nanoparticle (>~20 nm in diameter) at the geometric center of those graphene grains. Similar size particles were produced by slightly oxidizing the copper surface to obtain oxide nanoparticles in Ar-only environments, followed by reduction into large copper nanoparticles under H2/Ar environment, and are thus explained to be the main constituent nuclei for graphene growth. On this basis, we were able to control the nanoparticle density by adjusting the degree of oxidation and hydrogen annealing duration, thereby controlling nucleation density and consequently controlling graphene grain sizes. In addition, we found that hydrogen plays dual roles on copper morphology during the whole growth process, that is, removing surface irregularities and, at the same time, etching the copper surface to produce small nanoparticles that have only limited effect on nucleation for graphene growth. Our reported approach provides a highly efficient method for production of graphene film with long-range electronic connectivity and structure coherence.