Enhanced modulation bandwidth for strain-compensated InGaAlAs-InGaAsP MQW lasers

Matsui, Yasuhiro; Murai, Hitoshi; Arahira, S.; Ogawa, Y.; Suzuki, Akira

doi:10.1109/3.720235

Cited by 39 publications

(8 citation statements)

References 34 publications

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“…However, the decrease in nonlinear gain suppression coefficient with increasing temperature still can be seen. The nonlinear gain saturation results from a variety of factors, but it is considered to arise primarily through dynamic carrier heating [5], [6] and perhaps spectral hole burning [7]. If the factor is constant, it means the maximum bandwidth is insensitive to the temperature.…”

Section: Temperature Dependencementioning

confidence: 99%

“…The excessive damping that limits the electrical modulation bandwidth of quantum-well (QW) lasers originates from a number of possible mechanisms, including photon lifetime [1], carrier capture and escape [2], [3], carrier diffusion [4], carrier heating [5], [6], spectral hole burning [7], and circuit parasitics [8]. The photons generated by the stimulated recombination Manuscript received March 9, 1999; revised June 16, 1999.…”

Section: Introductionmentioning

confidence: 99%

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Temperature dependence of electrical and optical modulation responses of quantum-well lasers

Keating

Jin

Chuang

et al. 1999

IEEE J. Quantum Electron.

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Abstract-We present theory and experiment for high-speed optical injection in the absorption region of a quantum-well laser and compare the results with those of the electrical injection in cluding carrier transport effect. We show that the main difference between the two responses is the low-frequency roll-off. By using both injection methods, we obtain more accurate and consistent measurements of many important dynamic laser parameters, which include the differential gain, carrier lifetime, � factor, and gain compression factor. Temperature-dependent data of the test laser are presented which show that the most dominant effect is the linear degradation of differential gain and injection efficiency with increasing temperature. While the �-factor is insensitive to temperature variation for multiple-quantum-well lasers, we find that the carrier capture time and nonlinear gain suppression coefficient decreases as temperature increases.

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Section: Temperature Dependencementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Temperature dependence of electrical and optical modulation responses of quantum-well lasers

Keating

Jin

Chuang

et al. 1999

IEEE J. Quantum Electron.

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“…Over the past years, many efforts have been devoted to developing semiconductor lasers with a large bandwidth through, for example, the design of p-doped and strained quantum well structure. [1][2][3] As a result, a 3-dB modulation bandwidth of 30 GHz in 1.55-µm MQW lasers has been experimentally demonstrated. 4,5 This makes direct modulation a possible scheme for high speed applications.…”

Section: Introductionmentioning

confidence: 90%

Reduction of harmonic distortion in injection-locked semiconductor lasers

Hwang

Liu

White³

2004

SPIE Proceedings

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The characteristics of the second harmonic distortion (SHD) and the third harmonic distortion (THD) are experimentally investigated in a semiconductor laser subject to external optical injection. Compared with the free-running laser, both SHD and THD in the injection-locked semiconductor laser are observed to reduce significantly and equally for a large range of modulation power at a modulation frequency of 5 GHz, which are 15-dB and 23-dB decreased, respectively. At a fixed modulation power of 6 dBm, the reduction of SHD and THD is, however, found to vary with modulation frequency. The reduction of SHD is more substantial at around one-half of the relaxation resonance frequency of the free-running laser. The decrease in THD is, however, more significant at around one-half and one-third of the relaxation resonance frequency of the free-running laser. The reduction in harmonic distortions is also found to vary with the operational parameters of the injection signal. The reduction of SHD increases with the decreasing injection strength and the negatively decreasing detuning frequency, while that of THD shows a completely opposite behavior.

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“…It can be seen that while the quantum-well laser has the highest modulation efficiency, the long-dash laser is the most stable against temperature. From the modulation efficiency and the slope efficiency, the effective differential gain a can be calculated according to [24] as follows:…”

Section: Temperature Effects On Intrinsic Dynamicsmentioning

confidence: 99%

Intrinsic Dynamics of Quantum-Dash Lasers

Chen

Wang

Djie

et al. 2011

IEEE J. Select. Topics Quantum Electron.

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Abstract-Temperature-dependent intrinsic modulation response of InAs/InAlGaAs quantum-dash lasers was investigated by using pulse optical injection modulation to minimize the effects of parasitics and self-heating. Compared to typical quantum-well lasers, the quantum-dash lasers were found to have comparable differential gain but approximately twice the gain compression factor, probably due to carrier heating by free-carrier absorption, as opposed to stimulated transition. Therefore, the narrower modulation bandwidth of the quantum-dash lasers than that of quantum-well lasers was attributed to their higher gain compression factor. In addition, as expected, quantum-dash lasers with relatively long and uniform dashes exhibit higher temperature stability than quantum-well lasers. However, the lasers with relatively short and nonuniform dashes exhibit stronger temperature dependence, probably due to their higher surface-to-volume ratio and nonuniform dash sizes.

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Enhanced modulation bandwidth for strain-compensated InGaAlAs-InGaAsP MQW lasers

Cited by 39 publications

References 34 publications

Temperature dependence of electrical and optical modulation responses of quantum-well lasers

Temperature dependence of electrical and optical modulation responses of quantum-well lasers

Reduction of harmonic distortion in injection-locked semiconductor lasers

Intrinsic Dynamics of Quantum-Dash Lasers

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