Enhanced Modulation Characteristics of Optical Injection-Locked Lasers: A Tutorial

Lau, E.K.; Wong, Liang Jie; Wu, Ming C.

doi:10.1109/jstqe.2009.2014779

Cited by 248 publications

(166 citation statements)

References 71 publications

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“…For this application, the power of the master laser can be much lower than that of the slave laser, allowing for the realization of high-power laser devices with extremely low linewidth [LIU02a]. Furthermore, the modulation bandwidth of laser devices was shown to be greatly increased by an appropriate injection setup [JIN06,TER08a,LAU09a], with bandwidths exceeding 100 GHz [LAU08a].…”

Section: Quantum-dot Laser Dynamicsmentioning

confidence: 99%

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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In this thesis the dynamics and performance of optoelectronic devices based on semiconductor quantum-dots are investigated.In the first part, the dynamics of quantum-dot lasers under external perturbations is discussed. Using a microscopically based balance equation model that incorporates detailed charge-carrier scattering dynamics and the possibility to describe nonequilibrium between intra-band electronic states, the relaxation oscillations of the quantum-dot laser are investigated. Three qualitatively different dynamic regimes are identified in dependence of the scattering rates -the "constantreservoir" regime for slow scattering, the "overdamped" regime, and the "synchronized" regime for high scattering -characterized by a varying degree of nonequilibrium between the quantum-dot and reservoir states.Important differences to conventional lasers are found in the modulation response and the dynamics in optical injection and feedback setups. Common theoretical models and approaches used to describe these applications are shown to yield inaccurate predictions, especially in the "constant-reservoir" and "overdamped" dynamic regimes. An important consequence is that the amplitude-phase coupling in quantum-dot lasers, commonly described by the α-factor, differs from conventional descriptions due to the desynchronization of gain and refractive index. While the α-factor describes bifurcations of fixed points accurately, it fails in describing dynamic solutions and overestimates the extent of complex dynamics. The observed low sensitivity to optical perturbations in quantum-dot lasers can therefore be attributed partly to the charge-carrier nonequilibrium. Three quantum-dot laser models on different levels of sophistication are presented that can accurately describe the quantum-dot nonequilibrium dynamics.In the second part of the thesis, the performance of quantum-dot semiconductor optical amplifiers is investigated, and two types of applications unique to quantum-dots as active medium are discussed. The ground and excited states of the quantum-dots allow an ultra-broad-band amplification of optical data streams. Amplified signals on the ground-state frequencies are shown to generally exhibit higher quality than on the excited state, due to a lower sensitivity of the groundstate to carrier-density variations. Nevertheless the quantum-dot amplifier is found to allow effective amplification on both frequency ranges. Furthermore, a parameter range is identified that allows for a simultaneous amplification of data signals on the ground and excited state in a counter-propagating setup.The long microscopically polarization dephasing times in quantum-dots are found to enable quantum-coherent interactions on a macroscopic scale at room-temperature. By comparison with experiments, the occurrence of Rabi-oscillations by amplification of ultra-short pulses is demonstrated. Quantum-dot based devices could therefore be used for future applications based on quantum-coherent effects.

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Section: Quantum-dot Laser Dynamicsmentioning

confidence: 99%

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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“…One method of generating optical /mm  -wave signals is to use the optical injection locking (OIL) technique [4]. In this technique, the master laser (ML) is directly RFmodulated and has multiple optical sidebands which are separated by the modulation frequency, fm.…”

Section: Optical Injection Locking Schemementioning

confidence: 99%

“…Recent studies on OIL have found that the modulation bandwidth of a semiconductor laser can be significantly enhanced under the strong optical injection [4]. However, the locking properties under the strong optical injection have not been fully analyzed outside the dynamically stable locking range, where effects such as undamped relaxation oscillation and chaos can occur.…”

Section: Transient Response and Spectrum For Locking Regimementioning

confidence: 99%

Analysis of Spectral Characteristics of Semiconductor Lasers under Strong Optical Injection Locking for Tens of Giga Hz Signal Generation

Kim¹

2010

Journal of information and communication convergence engineerin

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“…However, the QDWELL laser modulation bandwidth of 7GHz is limited by the relaxation oscillation (RO) frequency. In order to improve the performance of directly modulated semiconductor lasers, the optical injection locking (OIL) of semiconductor lasers can be used providing a single-mode regime with side-mode suppression, strongly enhanced RO frequency, enhanced bandwidth, reduced nonlinearity, reduced relative intensity noise (RIN), reduced chirp, increased link gain, and near-single-sideband modulation [2]. The complicated dynamics of optically injected QDWELL lasers has been investigated both theoretically and experimentally using the Lüdge-Schöll (LS) model [3], [4].…”

Section: Introductionmentioning

confidence: 99%

Quantum dot-in-a-well (QDWELL) laser dynamics under optical injection

Ezra

Lembrikov

2013

Opt Quant Electron

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Abstract-We investigated theoretically the optical injection influence on the dynamics of a quantum dot (QD) in a quantum well (QDWELL) laser. The carrier dynamics is synchronized due to the optical injection, and QDWELL laser manifests a high performance at repetition frequencies up to 25GHz. I. INTRODUCTIONA novel type of quantum dot (QD) laser with the-dotin-a-well (DWELL) structure based on InAs QDs grown in the strained InGaAs quantum well (QW) characterized by an extremely low threshold current density of 42.6A · cm −2 and a lasing wavelength near 1.3µm has been recently proposed [1]. However, the QDWELL laser modulation bandwidth of 7GHz is limited by the relaxation oscillation (RO) frequency. In order to improve the performance of directly modulated semiconductor lasers, the optical injection locking (OIL) of semiconductor lasers can be used providing a single-mode regime with side-mode suppression, strongly enhanced RO frequency, enhanced bandwidth, reduced nonlinearity, reduced relative intensity noise (RIN), reduced chirp, increased link gain, and near-single-sideband modulation [2]. The complicated dynamics of optically injected QDWELL lasers has been investigated both theoretically and experimentally using the Lüdge-Schöll (LS) model [3], [4]. We have shown that due to the optical injection, the electron and hole dynamics in QW and QDs is synchronized, and consequently, the QDWELL laser demonstrates a high performance in the large signal regime for the moderate bias current level at the repetition frequencies up to 25GHz.

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Enhanced Modulation Characteristics of Optical Injection-Locked Lasers: A Tutorial

Cited by 248 publications

References 71 publications

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Analysis of Spectral Characteristics of Semiconductor Lasers under Strong Optical Injection Locking for Tens of Giga Hz Signal Generation

Quantum dot-in-a-well (QDWELL) laser dynamics under optical injection

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