No abstract

We show that the direct modulation bandwidth of nano-cavity light emitting devices (nLEDs) can greatly exceed that of any laser. By performing a detailed analysis, we show that the modulation bandwidth can be increased by the Purcell effect, but that this enhancement occurs only when the device is biased below the lasing threshold. The maximum bandwidth is shown to be inversely proportional to the square root of the modal volume, with sub-wavelength cavities necessary to exceed conventional laser speeds.

By using strong optical injection locking, we report resonance frequency enhancement in excess of 100 GHz in semiconductor lasers. We demonstrate this enhancement in both distributed feedback (DFB) lasers and vertical-cavity surface-emitting lasers (VCSELs), showing the broad applicability of the technique and that the coupling Q is the figure-of-merit for resonance frequency enhancement. We have also identified the key factors that cause low-frequency roll-off in injection-locked lasers. By increasing the slave laser's DC current bias, we have achieved a record intrinsic 3-dB bandwidth of 80 GHz in VCSELs.

Abstract-The modulation response of injection-locked lasers has been carefully analyzed, theoretically and experimentally, with a focus on the strong optical injection regime. We derive closed-form solutions to the relaxation oscillation (resonance) frequency and damping term, as well as the low-frequency damping term, and discuss design rules for maximizing resonance frequency and broadband performance. A phasor model is described in order to better explain the enhancement of the resonance frequency. Experimental curves match closely to theory. Record resonance frequency of 72 GHz and broadband results are shown.

Surface plasmons are widely interesting due to their ability to probe nanoscale dimensions. To create coherent plasmons, we demonstrate a nanolaser based on a plasmonic bandgap defect state inside a surface plasmonic crystal. A one-dimensional semiconductor-based plasmonic crystal is engineered to have stopbands in which surface plasmons are prohibited from travelling in the crystalline structure. We then confine surface plasmons using a three-hole defect in the periodic structure. Using conventional III-V semiconductors, we achieve lasing in mode volumes as small as V(eff) = 0.3(λ₀/n)³ at λ₀ = 1342 nm, which is 10 times smaller than similar modes in photonic crystals of the same size. This demonstration should pave the way for achieving engineered nanolasers with deep-subwavelength mode volumes and attractive nanophotonics integration capabilities while enabling the use of plasmonic crystals as an attractive platform for designing plasmons.