Enhanced nitrogen diffusion in 4H-SiC

Phelps, GJ; Wright, N. G.; Chester, E.G.; Johnson, C.M.; O'Neill, AG; Ortolland, S.; Horsfall, Alton B.; Vassilevski, Konstantin; Gwilliam, R.; Coleman, Peter J.; Burrows, C. P.

doi:10.1063/1.1432451

Cited by 12 publications

(13 citation statements)

References 16 publications

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“…Diffusion of boron into epitaxial p-n structures makes it possible to obtain p-i-n diodes 7 . It has been shown that presence of B enhances the nitrogen diffusion by a factor of ~ 60 38 . It was demonstrated in ref.…”

Section: Boronmentioning

confidence: 99%

Deep Level Defects in Silicon Carbide

Lebedev

2006

Int. J. Hi. Spe. Ele. Syst.

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Results obtained in recent studies of deep centers in 6H-, 4H-, and 3C-SiC are analyzed. The ionization energies and capture cross sections of centers formed by doping of SiC with different types of impurities or by irradiation, as well as the corresponding parameters of intrinsic defects, are presented. The involvement of these centers in radiative and nonradiative recombination is examined. Analysis of published data shows that a strong influence is exerted by intrinsic defects in the SiC crystal lattice both on the formation of deep centers and on the properties of the epitaxial layers themselves, such as their doping level and polytype homogeneity.

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Section: Boronmentioning

confidence: 99%

Deep Level Defects in Silicon Carbide

Lebedev

2006

Int. J. Hi. Spe. Ele. Syst.

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“…13 The experiments were performed with the 4H-SiC wafers, obtained from Cree Research Inc., diced into 5 mmϫ5 mm sample dies for ease of handling. Each wafer had a 10 m n-type epitaxial layer, doped with nitrogen to an known carrier concentration of 3ϫ10 15 cm Ϫ3 on a highly doped n-type substrate.…”

Section: Experimental Model Input Data Resultsmentioning

confidence: 99%

“…The initial values that have been used for the model have been determined empirically from previously published data. 13 Subsequent values have been fitted to the measured data by simulation runs of the model. For the purposes of this article, both the substrate ion diffusion coefficient and the substrate ion mobility coefficient are considered constant.…”

Section: Field Enhanced Diffusion Modelmentioning

confidence: 99%

“…8,9 The repair of the implantation damage and incorporation of the dopants on electrically active lattice sites 10 is normally achieved by postimplantation annealing at temperatures in the range 1400-1700°C. 9,11,12 Diffusion of implanted dopants from the initial as-implanted position during high temperature annealing does occur in 4H-SiC, 13 but is relatively slow compared to that experienced in Silicon technology. 14 -16 More complex ion migration phenomena, such as transient enhanced diffusion, have also been observed with dopants in SiC ͑notably boron͒, 2,17 and physical models for the mechanisms involved have been proposed.…”

Section: Introductionmentioning

confidence: 99%

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Field enhanced diffusion of nitrogen and boron in 4H–silicon carbide

Phelps

Chester

Johnson

et al. 2003

Journal of Applied Physics

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Articles you may be interested inA methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxidesemiconductor field-effect transistors Diffusion of boron in 6H and 4H SiC coimplanted with boron and nitrogen ions A field enhanced diffusion ͑FED͒ model is proposed for the observed phenomenon of dopant migration within 4H silicon carbide ͑4H-SiC͒ during high temperature annealing. The proposed FED model is based on the combined effects of both dopant diffusion and the in-built p -n junction electric field gradients found within the doped substrate resulting from the presence of the substrate dopants. Measured as-implanted dopant concentration profile data prior to high temperature annealing are utilized as input data for the proposed FED model. The resultant FED profile predictions of the proposed model during annealing are shown to be in excellent agreement with experimental findings. Parameters are extracted using the FED model simulation for the high temperature ionic diffusivity and ionic field mobility for nitrogen dopant in boron co-doped 4H-SiC. The extracted values for the ionic diffusivity and the ionic mobility of the nitrogen donor in boron co-doped 4H-SiC found using the model are 7.2ϫ10 Ϫ15 cm 2 s Ϫ1 and 1.6ϫ10 Ϫ13 cm 2 V Ϫ1 s Ϫ1 , respectively.

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“…[164]. SiC samples were implanted with N, B or Al at the energy of 60 keV to the dose of 7.5 × 10 12 -2.5 × 10 17 at/cm 2 and subsequently activated at temperatures of 800-1400 • C. In further studies the nitrogen implanted silicon carbide with the wide range of the energies and doses was used for the formation of p-n junction [165,166], determination of diffusion coefficients [167,168], the electric activation of nitrogen [169][170][171][172][173] and the dopant energy levels in the band gap [174].…”

Section: Nitrogen Properties In Sicmentioning

confidence: 99%

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

2019

Acta Phys. Pol. A

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The paper addresses the role of ambient elements (H, C, N and O) in the wide-bandgap semiconductor compounds. Their prevalence in the atmosphere imposes limitations not only on the purity of the materials under processing but, also, on the detection and measurement of the content of these species. Specifically, a review of electrical and optical properties, based on the available literature, is presented for: hydrogen in GaN, ZnO and SiC, carbon in GaN and ZnO, nitrogen in ZnO and SiC and oxygen in GaN and SiC. Further, the refinements of the SIMS (Secondary Ions Mass Spectrometry) analytical technique, aiming to improve the sensitivity and detection limit of atmospheric elements, are described in detail. These include the choice of primary beam type and current, type of secondary single or cluster ions, geometry and vacuum conditions. Finally, the evaluated so-called RSF parameters (Relative Sensitivity Factors) are given for each atom-semiconductor pair, converting raw data to the absolute value of concentration.

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Enhanced nitrogen diffusion in 4H-SiC

Cited by 12 publications

References 16 publications

Deep Level Defects in Silicon Carbide

Deep Level Defects in Silicon Carbide

Field enhanced diffusion of nitrogen and boron in 4H–silicon carbide

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

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