Enhanced optoelectronic and photoelectrochemical characteristics of nebulised spray pyrolysed ‘Cu’ rich CuInS2 thin film

Effect of transparent substrate on properties of CuInSe2 thin films prepared by chemical spray pyrolysis

“…The bulk resistivity of the CISe films was about 5.6 × 10 2 to 2.2 × 10 2 Ωcm. These values are similar to the reported values which are in the range 4.3 × 10 2 –5.3 × 10 2 Ωcm 102 , 103 . Also, the conductivity of all films was between 1.78 × 10 –3 to 4.49 × 10 –3 S cm −1 .…”

“…The higher hole diffusion coefficient value is favorable for fast charge transport and results from the effective connection of the grains to create the charge carrier's continuous pathway in the CISe films 105 . However, the existence of deep levels in the CISe films is unsuitable since they act as recombination centers for charge carriers and therefore reduce carrier diffusion coefficients in FTO/NiO x and FTO/MoO 3 films 103 .…”

Tunable structural, morphological and optical properties of undoped, Mn, Ni and Ag-doped CuInS2 thin films prepared by AACVD

“…[5][6][7][8] Controlling these intrinsic defects can result in n or p-type conductivities, and this along with tuning optical properties, 9 film morphology and homogeneity are important pursuits. 10 However, in light of the interest over the last decade into tunable optoelectronic properties of doped chalcogenides, 5,11,12 the paucity of reports on doped CIS is noteworthy. For example, PV cells with Ti-doped CIS exhibited improved open circuit voltages and increased efficiency whilst Al-doped CIS exhibited higher absorptivity.…”