Enhanced Optoelectronic Performance of CVD-Grown Metal–Semiconductor NiTe₂/MoS₂ Heterostructures

Abstract

Van der Waals (vdW) heterostructures are the fundamental blocks for two-dimensional (2D) electronic and optoelectronic devices. In this work, a high-quality 2D metal–semiconductor NiTe2/MoS2 heterostructure is prepared by a two-step chemical vapor deposition (CVD) growth. The back-gated field-effect transistors (FETs) and photodetectors based on the heterostructure show enhanced electronic and optoelectronic performance than that of a pristine MoS2 monolayer, owing to the better heterointerface in the former device. Especially, this photodetector based on the metal–semiconductor heterostructure shows 3 orders faster rise time and decay time than that of the pristine MoS2 under the same fabrication procedure. The enhancement of electronic behavior and optoelectronic response by the epitaxial growth of metallic vdW layered materials can provide a new method to improve the performance of optoelectronic devices.

Epitaxial Growth of 2D Bi2O2Se Nanoplates/1D CsPbBr3 Nanowires Mixed‐Dimensional Heterostructures with Enhanced Optoelectronic Properties

“…Two small pieces of Sn/Bi alloy foil were contacted to the Bi 2 O 2 Se plate of the heterostructure to respectively act as the drain and source electrodes by a 3D operating system with a microprobe under the optical microscope, [ 27 ] then the device was annealed at 100 °C for 3 min to improve the contact between the Bi 2 O 2 Se plate and the electrodes. CsPbBr 3 wires in the device of CsPbBr 3 /Bi 2 O 2 Se heterostructure can be in situ removed by distilled water, in which the device was soaked for 2 s with distilled water and then dried by the high pure N 2 .…”

A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

“…Higher photoresponse has been observed in 2D metal NiTe 2 and semiconductor MoS 2 heterostructure-based back-gated FETs and photodetectors compared to a pristine MoS 2 monolayer. 373 As discussed earlier, that the MoS 2 vdWH-based photodetectors show great promise for pratical applications, therefore, new vdW heterostructures have been targetted. The NiTe 2 /MoS 2 vdW heterostructure-based photodetectors showed several times faster rise/decay times than that of a MoS 2 photodetector due to the epitaxial grown metallic vdWHs.…”

A Mini Review of the Preparation and Photocatalytic Properties of Two-Dimensional Materials

“…Copyright 2018, American Chemical Society. (g) Schematic illustrating the two-step CVD growth of NiTe 2 /MoS 2 heterostructure (Zhai et al, 2020). Copyright 2020, American Chemical Society.…”

“…In Figure 1g, high quality 2D metalsemiconductor NiTe 2 /MoS 2 heterostructure is prepared by twostep CVD growth. Moreover, Zhai et al enhance electronic behavior and optoelectronic response by the epitaxial growth of metallic vdW layered materials that can bring a new method to improve the performance of optoelectronic devices (Zhai et al, 2020).…”