2021
DOI: 10.1016/j.nanoen.2021.106394
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Enhanced output performance of ZnO thin film triboelectric nanogenerators by leveraging surface limited ga doping and insulting bulk

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Cited by 22 publications
(9 citation statements)
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“…As a result, determining the surface charge density of various materials is critical. 26 There is a series of tests that evaluate the triboelectric performance of various materials. However, it is merely a qualitative standard for comparison.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…As a result, determining the surface charge density of various materials is critical. 26 There is a series of tests that evaluate the triboelectric performance of various materials. However, it is merely a qualitative standard for comparison.…”
Section: Resultsmentioning
confidence: 99%
“…Only the parameter contained in the FOM m indicates the output power contribution from the material property. As a result, determining the surface charge density of various materials is critical 26 . There is a series of tests that evaluate the triboelectric performance of various materials.…”
Section: Resultsmentioning
confidence: 99%
“…However, during ion bombardment, the pressure was ~ 1 × 10 mbar. The energy scale was calibrated using the binding energy of carbon C 1s peak at (289.58 - ZnO ) eV [21] where  ZnO = 4.85 eV is the undoped ZnO work function reported by Lee et al [22].…”
Section: Scanning Electron Microscope and Edx (A Vega 3 Tescan Scanni...mentioning
confidence: 99%
“…Nevertheless, friction materials treated by these methods tended to be less stable. In recent years, researchers found that semiconductors can also produce charge transfer by rubbing against another material and could generate direct current (DC) with high density, which gives them an advantage over conventional TENGs. Therefore, the triboelectrification phenomenon between semiconductors has been given more and more attention. It is noteworthy that the third-generation semiconductor materials (for instance, gallium nitride (GaN)) have the characteristics of large bandgap width, high breakdown field strength, and high electron saturation speed, which can achieve excellent output performance for nearly two years as a new friction materials. …”
Section: Introductionmentioning
confidence: 99%