Enhanced Over-current Capability and Extended SOA of Power Modules Utilizing Phase Change Material

Shao, Wei; Wu, Ruizhu; Li, Ran; Jiang, Huaping; Coombs, Tom; Yardley, Kieran; Mawby, Philip; Kastha, Debaprasad; Bajpai, Prabodh

doi:10.1109/ecce.2019.8913310

Cited by 6 publications

(4 citation statements)

References 12 publications

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“…The application of PCM is investigated to keep the junction temperature below 130 • C for 150% and 300% OCs [116], [8]. This temperature would have been reached for 20% OC in a commercial module without PCM in the same time [116], [117], as compared to OC increased for 3 and 5 pu.…”

Section: A Adding Materials On the Top Of The Chipmentioning

confidence: 99%

“…The package level microchannels are made on a Si substrate in which the Si substrate functions as a microfluidic heat sink. Package-level cooling is capable of cooling for heat fluxes up to 500 W/cm 2 [129] while microchannels closer to the semiconductor die are effective for heat fluxes up to (a) [116], [8] (b) [117] (c) [118], [119] (d) Proposed solution Fig. 8: Combination of PCM and metals in order to have the advantages of PCM and metals at the same time.…”

Section: B Microchannel Coolingmentioning

confidence: 99%

“…Adding a suitable heat-absorbing material (for instance copper) on the top surface of the semiconductor chip is one alternative. Phase change materials (PCMs) can also be used to clamp the temperature for a specific duration [8]. It may also be possible to introduce Peltier elements into the package [9].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Bhadoria

Dijkhuizen

Raj

et al. 2023

IEEE Trans. Power Electron.

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With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technologies for the over-current performance of SiC power modules in power electronics converters. It presents the limitations produced at the power module level by packaging materials which include semiconductor chips, substrates, metallization, bonding techniques, die attach, and encapsulation materials. Specifically, technologies for over-current related temperatures in excess of 200 • C are discussed. The paper also discusses potential technologies which have been proven or may be potential candidates for improving the safe operating area. The discussed technologies are use of phase change materials below the semiconductor chip, Peltier elements, new layouts of the power modules, control and modulation techniques for converters. Special attention has been given to an overview of various potential phase change materials which can be considered for high-temperature operations.

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Section: A Adding Materials On the Top Of The Chipmentioning

confidence: 99%

Section: B Microchannel Coolingmentioning

confidence: 99%

See 1 more Smart Citation

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Bhadoria

Dijkhuizen

Raj

et al. 2023

IEEE Trans. Power Electron.

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show abstract

“…Another method is to add heat-absorbing material below the chip. One such method using combinations of phase change materials (PCMs) with metal containers has been investigated in [25][26][27][28][29] for the duration of 3-30 s. PCMs have high latent heat of fusion and low thermal conductivity; hence, the metal containers (being an excellent thermal conductor) in them effectively provide paths of lower thermal resistance such that the heat can be transferred to the PCM. This method suffers from the disadvantage that the junction temperature during steady-state operation is also increased due to the increase in the overall thermal resistance for the heat flow towards the heat sink.…”

Section: Introductionmentioning

confidence: 99%

Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip

Bhadoria,

Dijkhuizen,

Zhang

et al. 2024

Energies

Self Cite

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An increasing share of fluctuating and intermittent renewable energy sources can cause over-currents (OCs) in the power system. The heat generated during OCs increases the junction temperature of semiconductor devices and could even lead to thermal runaway if thermal limits are reached. In order to keep the junction temperature within the thermal limit of the semiconductor, the power module structure with heat-absorbing material below the chip is investigated through COMSOL Multiphysics simulations. The upper limits of the junction temperature for Silicon (Si) and Silicon Carbide (SiC) are assumed to be 175 and 250 ∘C, respectively. The heat-absorbing materials considered for analysis are a copper block and a copper block with phase change materials (PCMs). Two times, three times, and four times of OCs would be discussed for durations of a few hundred milliseconds and seconds. This article also discusses the thermal performance of a copper block and a copper block with PCMs. PCMs used for Si and SiC are LM108 and Lithium, respectively. It is concluded that the copper block just below the semiconductor chip would enable OC capability in Si and SiC devices and would be more convenient to manufacture as compared to the copper block with PCM.

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Research on passive cooling of electronic chips based on PCM: A review

Zhang

2021

Journal of Molecular Liquids

109

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Enhanced Over-current Capability and Extended SOA of Power Modules Utilizing Phase Change Material

Cited by 6 publications

References 12 publications

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip

Research on passive cooling of electronic chips based on PCM: A review

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